Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology
J. Romijn (TU Delft - Electronic Components, Technology and Materials)
L.M. Middelburg (TU Delft - Electronic Components, Technology and Materials)
S Vollebregt (TU Delft - Electronic Components, Technology and Materials)
B. el Mansouri (TU Delft - Electronic Components, Technology and Materials)
H. van Zeijl (TU Delft - Electronic Components, Technology and Materials)
Alexander May (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Tobias Erlbacher (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
G. Zhang (TU Delft - Electronic Components, Technology and Materials)
P.M. Sarro (TU Delft - Electronic Components, Technology and Materials)
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Abstract
Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of resistance, with a maximum change of 79%. Secondly, CMOS devices are used to implement a CTAT, which achieves a maximum sensitivity of 7.5mV/K in a temperature range of 25-165°C. The integration of readout electronics and sensors that are capable of operation in higher temperature than silicon, opens application in harsher environments.