An analog to digital converter in a SiC CMOS technology for high-temperature applications
J. Mo (TU Delft - Electronic Components, Technology and Materials)
Yunfan Niu (Student TU Delft)
Alexander May (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Mathias Rommel (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Chiara Rossi (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Joost Romijn (TU Delft - Microelectronics)
Guo Qi Z Zhang (TU Delft - Electronic Components, Technology and Materials)
Sten Vollebregt (TU Delft - Electronic Components, Technology and Materials)
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Abstract
Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal-oxide-semiconductor technology now available through Europractice. The MOSFET component in this technology was measured up to 500 °C, and the key parameters, such as threshold voltage, field-effect mobility, and channel-length modulation parameters, were extracted. A 4-bit flash data converter, consisting of 266 transistors, is implemented with this technology and demonstrates correct operation up to 400 °C. Finally, the gate oxide quality is investigated by time-dependent dielectric breakdown measurements at 500 °C. A field-acceleration factor of 4.4 dec/(MV/cm) is obtained by applying the E model.
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