A Hybrid Magnetic Current Sensor With a Multiplexed Ripple-Reduction Loop

Journal Article (2023)
Author(s)

A. Jouyaeian (TU Delft - Electronic Instrumentation)

Q Fan (TU Delft - Microelectronics)

Roger Zamparette (TU Delft - Electronic Instrumentation)

Udo Ausserlechner (Infineon Technologies AG)

Mario Motz (Infineon Technologies AG)

Kofi AA Makinwa (TU Delft - Microelectronics)

Research Group
Electronic Instrumentation
Copyright
© 2023 A. Jouyaeian, Q. Fan, R.L. Brito Zamparette, Udo Ausserlechner, Mario Motz, K.A.A. Makinwa
DOI related publication
https://doi.org/10.1109/JSSC.2023.3273389
More Info
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Publication Year
2023
Language
English
Copyright
© 2023 A. Jouyaeian, Q. Fan, R.L. Brito Zamparette, Udo Ausserlechner, Mario Motz, K.A.A. Makinwa
Research Group
Electronic Instrumentation
Issue number
10
Volume number
58
Pages (from-to)
2874-2882
Reuse Rights

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Abstract

This article presents a hybrid magnetic current sensor for galvanically isolated measurements. It consists of a CMOS chip that senses the magnetic field generated by current flowing through a lead-frame-based current rail. Hall plates and coils are used to sense low-frequency (dc to 10 kHz) and high-frequency (10 kHz to 5 MHz) magnetic fields, respectively. With the help of on- chip calibration coils, the biasing current of the Hall plates is trimmed to match the sensitivity of the Hall and coil signal paths. The sensitivity drift of the coil path with temperature is compensated by using temperature-dependent gain-setting resistors, while the drift of the Hall path is compensated by biasing the Hall plates with a proportional- to-absolute-temperature (PTAT) current. The resulting sensitivity drift is less than 9% from-40 °C to 80 °C. The offset of the Hall plates is reduced by the current spinning technique, and the resulting ripple is suppressed by a multiplexed ripple-reduction loop (MMRL). Fabricated in a standard 0.18-μm CMOS process, the current sensor occupies 4.6 mm2 and draws 7.8 mA from a 1.8-V supply. It achieves a gain variation of only ±2% in a 5-MHz BW. It also achieves high energy efficiency, with an figure of merit (FoM) of 1.6 fW/Hz.

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