A Charge Detection ROIC with Sub-6ppm Error Rate and 200μW Power Consumption in Scanning Electron Microscopy

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A Charge Detection ROIC with Sub-6ppm Error Rate and 200μW Power Consumption in Scanning Electron Microscopy

Conference Paper (2025)

Author(s)

A. M. Zaki (TU Delft - Electronic Instrumentation)

L. Bouman (Student TU Delft)

S. Nihtianov (TU Delft - Electronic Instrumentation)

Research Group

Electronic Instrumentation

DOI related publication

https://doi.org/10.1109/ESSERC66193.2025.11214094

Low-offset Comparator Single electron detection Readout frontend Highprecision

To reference this document use:

https://resolver.tudelft.nl/uuid:99786eb0-07f1-4760-bd78-52f1f2738ca7

More Info

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Publication Year

2025

Language

English

Research Group

Electronic Instrumentation

Bibliographical Note

Green Open Access added to TU Delft Institutional Repository as part of the Taverne amendment. More information about this copyright law amendment can be found at https://www.openaccess.nl. Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.@en

Pages (from-to)

569-572

Publisher

IEEE

ISBN (print)

979-8-3315-2540-8

ISBN (electronic)

979-8-3315-2539-2

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Abstract

Imaging nanoscopic features with Scanning Electron Microscopes (SEMs) requires rapid specimen scanning with a low-energy electron beam. The electron detector is highly pixelated. Each pixel is interfaced with a high-precision, widebandwidth, low-noise readout integrated circuit (ROIC), to enable single-electron counting operation. This paper introduces an innovative power-efficient pixel readout frontend architecture, achieving a time resolution of 2.5 ns. The fabricated prototype in 40 nm CMOS process demonstrates better than 6 ppm electron detection precision. It consumes only 200 μ W, with an area of 150 μ m × 100 μ m.

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