Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits
L. Petit (TU Delft - QCD/Veldhorst Lab)
J. M. Boter (TU Delft - QCD/Vandersypen Lab)
H. G.J. Eenink (TU Delft - QCD/Veldhorst Lab)
G. Droulers (TU Delft - QCD/Vandersypen Lab)
M. L.V. Tagliaferri (TU Delft - QCD/Veldhorst Lab)
R. Li (TU Delft - QCD/Veldhorst Lab)
D. P. Franke (TU Delft - QCD/Veldhorst Lab)
K. J. Singh (Intel Corporation)
J. S. Clarke (Intel Corporation)
R. N. Schouten (TU Delft - ALG/General)
V. V. Dobrovitski (TU Delft - QID/Dobrovitski Group)
L. M.K. Vandersypen (TU Delft - QN/Vandersypen Lab, TU Delft - QCD/Vandersypen Lab)
M. Veldhorst (TU Delft - QCD/Veldhorst Lab)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.