Spin Lifetime and Charge Noise in Hot Silicon Quantum Dot Qubits

Journal article (2018)

Authors

L. Petit QCD/Veldhorst Lab - QuTech Advanced Research Centre
J.M. Boter QCD/Vandersypen Lab - QuTech Advanced Research Centre
V.V. Dobrovitski QID/Dobrovitski Group - QuTech Advanced Research Centre
L.M.K. Vandersypen QN/Vandersypen Lab - AS , QCD/Vandersypen Lab - QuTech Advanced Research Centre
M. Veldhorst QCD/Veldhorst Lab - QuTech Advanced Research Centre
H.G.J. Eenink QCD/Veldhorst Lab - QuTech Advanced Research Centre
G. Droulers QCD/Vandersypen Lab - QuTech Advanced Research Centre
M.L.V. Tagliaferri QCD/Veldhorst Lab - QuTech Advanced Research Centre
R. Li QCD/Veldhorst Lab - QuTech Advanced Research Centre
D.P. Franke QCD/Veldhorst Lab - QuTech Advanced Research Centre
K. J. Singh Intel Labs
J. S. Clarke Intel Labs
R.N. Schouten ALG/General - QuTech Advanced Research Centre
Research Group
QCD/Veldhorst Lab (QuTech Advanced Research Centre) (TU Delft)
Copyright: © 2018 L. Petit, J.M. Boter, H.G.J. Eenink, G. Droulers, M.L.V. Tagliaferri, R. Li, D.P. Franke, K. J. Singh, J. S. Clarke, R.N. Schouten, V.V. Dobrovitski, L.M.K. Vandersypen, M. Veldhorst
DOI: https://doi.org/10.1103/PhysRevLett.121.076801
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Published Date

14-08-2018

Language

English

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Faculty

QuTech Advanced Research Centre

Department

Quantum Computing Division

Research Group

QCD/Veldhorst Lab

Abstract

We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson noise and two-phonon processes limit relaxation at low and high temperature, respectively. We also investigate the effect of temperature on charge noise and find a linear dependence up to 4 K. These results contribute to the understanding of relaxation in silicon quantum dots and are promising for qubit operation at elevated temperatures.