A 1-3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS

Conference paper (2020)

Authors

Y. Shen Electronics -

R.J. Bootsman Electronics -

S.M. Alavi Electronics -

L.C.N. de Vreede Electronics -

Research Group

Electronics () (TU Delft)

RF-DAC Harmonic rejection Dynamic biasing DDRM DPD-free CG PA IQ-Interleaving PA driver

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http://resolver.tudelft.nl/uuid:a6440498-09f0-4929-92c3-11aa032e1413

Published Date

2020

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

We present a 1-3 GHz, 2×13-bit I/Q interleaved direct-digital RF modulator (DDRM) realized in 40 nm CMOS technology as a driver for an external common-gate (CG) power amplifier (PA). The proposed digital-intensive quadrature up-converter features a pair of novel current-steering mixing DACs with an additional leakage path to boost the efficiency of the external CG PA. The realized DDRM also employs IQ-interleaving, harmonic rejection, and dynamic biasing to improve its spectral purity, in-band linearity, and system efficiency. The proposed digital up-converter prototype provides standalone more than 19.6 dBm RF peak output power. Without using any digital pre-distortion, it achieves an ACLR of-44.5 dBc and an EVM of-35 dB, when applying an 80 MHz 256 QAM signal at 2.4 GHz.

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