A 1-3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS

Conference Paper (2020)
Author(s)

Y. Shen (TU Delft - Electronics)

R.J. Bootsman (TU Delft - Electronics)

M. S. Alavi (TU Delft - Electronics)

Leo C. N. de Vreede (TU Delft - Electronics)

Research Group
Electronics
DOI related publication
https://doi.org/10.1109/RFIC49505.2020.9218324
More Info
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Publication Year
2020
Language
English
Research Group
Electronics
Pages (from-to)
287-290
ISBN (electronic)
9781728168098

Abstract

We present a 1-3 GHz, 2×13-bit I/Q interleaved direct-digital RF modulator (DDRM) realized in 40 nm CMOS technology as a driver for an external common-gate (CG) power amplifier (PA). The proposed digital-intensive quadrature up-converter features a pair of novel current-steering mixing DACs with an additional leakage path to boost the efficiency of the external CG PA. The realized DDRM also employs IQ-interleaving, harmonic rejection, and dynamic biasing to improve its spectral purity, in-band linearity, and system efficiency. The proposed digital up-converter prototype provides standalone more than 19.6 dBm RF peak output power. Without using any digital pre-distortion, it achieves an ACLR of-44.5 dBc and an EVM of-35 dB, when applying an 80 MHz 256 QAM signal at 2.4 GHz.

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