A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS

Conference Paper (2020)
Author(s)

Y. Shen (TU Delft - Electronics)

R.J. Bootsman (TU Delft - Electronics)

M. S. Alavi (TU Delft - Electronics)

Leo C. N. de Vreede (TU Delft - Electronics)

Research Group
Electronics
DOI related publication
https://doi.org/10.1109/CICC48029.2020.9075949
More Info
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Publication Year
2020
Language
English
Research Group
Electronics
Volume number
2020-March
ISBN (electronic)
9781728160313

Abstract

This paper presents a wideband, 2× 12 -bit I/Q interleaved direct-digital RF modulator (DDRM) realized in 40 nm CMOS technology. The proposed digital-intensive quadrature upconverter features an advanced I/Q-mapping unit cell to boost RF power, in-band linearity, and out-of-band spectral purity. The modulator provides more than 14 dBm RF peak output power. It achieves an ACLR of -52 dBc and an EVM of -40 dB when applying a 20 MHz 256 QAM signal at 2.4 GHz. When applying a 320 MHz 256 QAM signal at 2.4 GHz, the measured ACLR and EVM are better than -43 dBc and -32 dB, respectively, without applying any digital pre-distortion.

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