Effect of Quantum Hall Edge Strips on Valley Splitting in Silicon Quantum Wells

Journal Article (2020)
Author(s)

Brian Paquelet Wuetz (Kavli institute of nanoscience Delft, TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre)

Merritt P. Losert (University of Wisconsin-Madison)

Alberto Tosato (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab)

Mario Lodari (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - QCD/Scappucci Lab)

Peter L. Bavdaz (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab)

Lucas Stehouwer (Kavli institute of nanoscience Delft, Student TU Delft)

Amir Sammak (TU Delft - Business Development, TNO)

Menno Veldhorst (Kavli institute of nanoscience Delft, TU Delft - QCD/Veldhorst Lab, TU Delft - QuTech Advanced Research Centre)

Giordano Scappucci (TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

undefined More Authors (External organisation)

Research Group
QCD/Scappucci Lab
DOI related publication
https://doi.org/10.1103/PhysRevLett.125.186801
More Info
expand_more
Publication Year
2020
Language
English
Research Group
QCD/Scappucci Lab
Issue number
18
Volume number
125
Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Abstract

We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field B and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with B and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density eB/h across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 μeV/1011 cm-2, which is consistent with theoretical predictions for near-perfect quantum well top interfaces.

Files

PhysRevLett.125.186801.pdf
(pdf | 0.48 Mb)
License info not available