Thermal analysis and optimization of IGBT power electronic module based on layout model

Other (2016)

Authors

H. Tang Electronic Components, Technology and Materials - , Changzhou Institute of Technology Research for Solid State Lighting

H. Ye Chongqing University

Mingming Wang Changzhou Institute of Technology Research for Solid State Lighting

X. Fan Lamar University

Kouchi Zhang Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

Optimization Thermal analysis IGBT power electronic module Layout model

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http://resolver.tudelft.nl/uuid:b1fe5422-4723-4e02-b493-1fedacbc8a45

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Published Date

16-08-2016

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

In this work, one layout model of insulated gate bipolar transistor (IGBT) module are built by using a general analytical solution, which is used to analyze the effect of thermal spreading resistance on the whole temperature distribution of a rectangular board with multiple eccentric heat sources. IGBT power electronic module is optimized by changing the arrangement of IGBT and FRD chips on the cooling system with consideration of junction temperature (T j ), temperature uniformity. According to the thermal analysis and optimization on the layout models, quantitative designs of IGBT power electronic module for chip arrangement are achieved.