Thermal analysis and optimization of IGBT power electronic module based on layout model

Abstract

In this work, one layout model of insulated gate bipolar transistor (IGBT) module are built by using a general analytical solution, which is used to analyze the effect of thermal spreading resistance on the whole temperature distribution of a rectangular board with multiple eccentric heat sources. IGBT power electronic module is optimized by changing the arrangement of IGBT and FRD chips on the cooling system with consideration of junction temperature (T j ), temperature uniformity. According to the thermal analysis and optimization on the layout models, quantitative designs of IGBT power electronic module for chip arrangement are achieved.