Characterization of the defect density states in MoOx for c-Si solar cell applications
D. Scire (Università degli Studi di Palermo)
Robert Macaluso (Università degli Studi di Palermo)
Mauro Mosca (Università degli Studi di Palermo)
S. Mirabella (University of Catania)
Antonino Gulino (University of Catania)
O. Isabella (TU Delft - Photovoltaic Materials and Devices)
M Zeman (TU Delft - Electrical Sustainable Energy)
Isodiana Crupi (Università degli Studi di Palermo)
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Abstract
Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.
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