Characterization of the defect density states in MoOx for c-Si solar cell applications

Journal article (2021)

Authors

D. Scire Università degli Studi di Palermo
Robert Macaluso Università degli Studi di Palermo
Mauro Mosca Università degli Studi di Palermo
S. Mirabella University of Catania
Antonino Gulino University of Catania
O. Isabella Photovoltaic Materials and Devices - EEMCS
M. Zeman Electrical Sustainable Energy
Isodiana Crupi Università degli Studi di Palermo
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
Copyright: © 2021 D. Scire, Robert Macaluso, Mauro Mosca, S. Mirabella, Antonino Gulino, O. Isabella, M. Zeman, I. Crupi
DOI: https://doi.org/10.1016/j.sse.2021.108135
More Info
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Published Date

2021

Language

English

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.

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