Comparison of electromigration and stress-voiding properties of submicron Al-Cu (1 at% Cu) and AlNiCr (0.1 at% Ni, o.1 at%Cr) interconnect lines
Conference Paper
(1998)
Author(s)
AJ Kalkman (TU Delft - QN/Fysics of NanoElectronics)
A.H. Verbruggen (TU Delft - QN/Fysics of NanoElectronics)
G.C.A.M. Janssen (TU Delft - OLD Metals Processing, Microstructures and Properties)
JP Lokker (TU Delft - QN/Fysics of NanoElectronics)
S Radelaar (TU Delft - OLD Metals Processing, Microstructures and Properties)
Research Group
QN/Fysics of NanoElectronics
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https://resolver.tudelft.nl/uuid:bf9130d1-2245-40e2-ad79-198a6c021dba
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Publication Year
1998
Research Group
QN/Fysics of NanoElectronics
Pages (from-to)
225-229
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