Investigating Laser-Induced Phase Engineering in MoS₂ Transistors

Journal article (2018)

Authors

N. Papadopoulos QN/Steele Lab - AS , Kavli institute of nanoscience Delft
J.O. Island QN/van der Zant Lab - AS , Kavli institute of nanoscience Delft
H.S.J. van der Zant QN/van der Zant Lab - AS , Kavli institute of nanoscience Delft
G.A. Steele QN/Steele Lab - AS , Kavli institute of nanoscience Delft
Research Group
QN/Steele Lab (AS) (TU Delft)
Copyright: © 2018 N. Papadopoulos, J.O. Island, H.S.J. van der Zant, G.A. Steele
DOI
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https://doi.org/10.1109/TED.2018.2855215
Phase transition Molybdenum Molybdenum disulfide Sulfur Field effect transistors Laser patterning (LP) Laser transitions Power lasers Transistors.
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Published Date

2018

Language

English

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Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/Steele Lab

Abstract

Phase engineering of MoS? transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS? flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS? transistors by simple light exposure. Nevertheless, the fabrication and demonstration of laser-patterned MoS? devices starting from the metallic polymorph have not been demonstrated yet. Here, we study the effects of laser radiation on 1T/1T2$-MoS? transistors with the prospect of driving an in situ phase transition to the 2H-polymorph through light exposure. We find that although the Raman peaks of 2H-MoS? become more prominent and the ones from the 1T/1T$2 phase fade after the laser exposure, the semiconducting properties of the laser-patterned devices are not fully restored, and the laser treatment ultimately leads to the degradation of the transport channel.