A 720 nW Current Sensor with 0-to-15 V Input Common-Mode Range and ±0.5% Gain Error from -40 to 85 °C

Conference Paper (2023)
Author(s)

Roger Zamparette (TU Delft - Electronic Instrumentation)

Kofi Makinwa (TU Delft - Microelectronics)

Research Group
Electronic Instrumentation
DOI related publication
https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185309
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Publication Year
2023
Language
English
Research Group
Electronic Instrumentation
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Publisher
IEEE
ISBN (print)
979-8-3503-4669-5
ISBN (electronic)
978-4-86348-806-9
Event
2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 (2023-06-11 - 2023-06-16), Kyoto, Japan
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Abstract

This paper presents a nano-power high-side shunt-based current sensor (CS) that digitizes the voltage drop across an on-chip (±1A) or a lead-frame (±30A) shunt. A TC-tunable ADC reference compensates for the shunts' large temperature coefficient (TC), resulting in ±0.5% gain error from -40 to 85°C. The CS employs a capacitively coupled gm-boosted front-end followed by a CCO-based Δ Σ ADC. Together with a floating input chopper, this results in an input common-mode range (ICMR) of 0-to-15V, the largest reported for a CS implemented in a standard CMOS process. It achieves high energy efficiency (164dB FoM) while consuming only 720nW, representing a 4 × improvement on the state-of-the-art and making this the first ever reported sub-μ W smart current sensor.

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