Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization
Conference Paper
(2010)
Authors
MR Tajari Mofrad (TU Delft - Electronic Components, Technology and Materials)
R. Ishihara (TU Delft - Electronic Components, Technology and Materials)
J van der Cingel (TU Delft - Electronic Components, Technology and Materials)
C.I.M. Beenakker (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://doi.org/10.1109/RTP.2010.5623801
TU Delft Repository resolver:
https://resolver.tudelft.nl/c80764ad-ead8-48e9-8f4e-e19270174bc4
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Publication Year
2010
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
42-48
ISBN (print)
978-1-4244-8393-3
DOI:
https://doi.org/10.1109/RTP.2010.5623801
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