Location- and orientation-controlled, large single grain silicon induced by pulsed excimer laser crystallization

Conference Paper (2010)
Authors

MR Tajari Mofrad (TU Delft - Electronic Components, Technology and Materials)

R. Ishihara (TU Delft - Electronic Components, Technology and Materials)

J van der Cingel (TU Delft - Electronic Components, Technology and Materials)

C.I.M. Beenakker (TU Delft - Electronic Components, Technology and Materials)

Research Group
Electronic Components, Technology and Materials
To reference this document use:
https://doi.org/10.1109/RTP.2010.5623801
More Info
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Publication Year
2010
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
42-48
ISBN (print)
978-1-4244-8393-3
DOI:
https://doi.org/10.1109/RTP.2010.5623801

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