Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

Conference Paper (2011)
Author(s)

M Poljak (External organisation)

V Jovanovic (TU Delft - Electronic Components, Technology and Materials)

T Suligoj (External organisation)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/SOI.2011.6081700
More Info
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Publication Year
2011
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
156-157
ISBN (print)
978-1-61284-760-3

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