Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling

Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Investigation of hole mobility in ultrathin-body SOI MOSFETs on (110) surface: Effects of silicon thickness and body doping

Suppression of corner effects in wide channel triple gate bulk finfets

Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETS, ultrathin-body SOI MOSFETS and double-gate MOSFETS for different orientations

Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications

Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

Ultra-high aspect ratio FinFet technology

Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS

Improving bulk FinFET DC performance in comparison to SOI FinFET

Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs

Suppression of Corner Effects in Triple-Gate Bulk FINFETs

FinFET Considerations for 0.18 um Technology

Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs