MP

M Poljak

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17 records found

FinFET Considerations for 0.18 um Technology
Conference paper - V. Jovanovic, M Poljak, T Suligoj

Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETS, ultrathin-body SOI MOSFETS and double-gate MOSFETS for different orientations
Conference paper - M Poljak, V. Jovanovic, T Suligoj

Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces
Conference paper - M Poljak, V. Jovanovic, T Suligoj

Improving bulk FinFET DC performance in comparison to SOI FinFET
Journal article - M Poljak, V. Jovanovic, T Suligoj

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm
Conference paper - M Poljak, V. Jovanovic, T Suligoj

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications
Conference paper - M Poljak, V. Jovanovic, T Suligoj

Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs
Conference paper - M Poljak, V. Jovanovic, T Suligoj

Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs
Conference paper - M Poljak, V. Jovanovic, T Suligoj

Suppression of corner effects in wide channel triple gate bulk finfets
Journal article - M Poljak, V. Jovanovic, T Suligoj

Ultra-high aspect ratio FinFet technology

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications
Journal article - M Poljak, V. Jovanovic, T Suligoj

Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices
Conference paper - V. Jovanovic, L.K. Nanver, T Suligoj, M Poljak

Suppression of Corner Effects in Triple-Gate Bulk FINFETs
Conference paper - M Poljak, V. Jovanovic, T Suligoj

Investigation of hole mobility in ultrathin-body SOI MOSFETs on (110) surface: Effects of silicon thickness and body doping
Conference paper - M Poljak, V. Jovanovic, T Suligoj

Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS
Conference paper - M Poljak, V. Jovanovic, T Suligoj

Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling
Journal article - M Poljak, V. Jovanovic, D Grgec, T Suligoj