17 records found
1
Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling
Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm
Investigation of hole mobility in ultrathin-body SOI MOSFETs on (110) surface: Effects of silicon thickness and body doping
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications
Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs
Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications
Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETS, ultrathin-body SOI MOSFETS and double-gate MOSFETS for different orientations
Suppression of corner effects in wide channel triple gate bulk finfets
Ultra-high aspect ratio FinFet technology
Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces
Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS
Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices
Suppression of Corner Effects in Triple-Gate Bulk FINFETs
1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs
FinFET Considerations for 0.18 um Technology
Improving bulk FinFET DC performance in comparison to SOI FinFET
Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs