Assessment of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs using physics-based modeling

Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

Investigation of hole mobility in ultrathin-body SOI MOSFETs on (110) surface: Effects of silicon thickness and body doping

Ultra-high aspect ratio FinFet technology

Quantum-mechanical modeling of phonon-limited electron mobility in bulk MOSFETS, ultrathin-body SOI MOSFETS and double-gate MOSFETS for different orientations

Physical mechanisms of electron mobility behavior in ultra-thin body double gate MOSFETS with (100) and (111) active surfaces

Orientation dependent electron mobility behavior with downscaling of Fin-width in double and triple gate SOI FinFETS

Suppression of corner effects in wide channel triple gate bulk finfets

Modeling study on carrier mobility in ultra thin body FinFETS with circuit level implications

Suppression of Corner Effects in Triple-Gate Bulk FINFETs

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices

Improving bulk FinFET DC performance in comparison to SOI FinFET

Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs

FinFET Considerations for 0.18 um Technology