A -87.2 dB THD+N 89.1 dB DR Fully-Integrated Shunt-Resistor-Based In-Line Current Sensor with up to 2 MHz 14.4 V PWM Rejection

Conference Paper (2025)
Author(s)

Heng Ma (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Huajun Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Marco Berkhout (Monolithic Power Systems)

Qinwen Fan (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.23919/VLSITechnologyandCir65189.2025.11075038 Final published version
More Info
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Publication Year
2025
Language
English
Research Group
Electronic Components, Technology and Materials
Publisher
IEEE
ISBN (electronic)
9784863488151
Event
2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (2025-06-08 - 2025-06-12), Kyoto, Japan
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29
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Abstract

This paper presents a cost-effective, fully-integrated shunt-resistor-based in-line current sensor offering high linearity and effective PWM rejection for audio applications. To mitigate the on-chip shunt resistor self-heating, which could severely compromise the linearity of the current sensor, a thermal compensation method is proposed and improves the THD+N by up to 23.6 dB. A floating Gm stage is proposed to reject highfrequency high-voltage (HV) PWM signals at the audio amplifier switching node. Implemented in a 180 nm BCD process, the prototype achieves a peak THD + N of -87.2 dB and a DR of 89.1 dB with up to 2 MHz, 14.4

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