Vacuum assisted liquified metal (VALM) TSV filling method with superconductive material

Conference Paper (2018)
Author(s)

J.A. Alfaro (Instituto Tecnologico de Costa Rica)

Paolo Maria Sberna (TU Delft - Tera-Hertz Sensing)

Cinzia Silvestri (TU Delft - Tera-Hertz Sensing)

M. Mastrangeli (TU Delft - Electronic Components, Technology and Materials)

R. Ishihara (TU Delft - Quantum Integration Technology, TU Delft - QID/Ishihara Lab)

Lina Sarro (TU Delft - Electronic Components, Technology and Materials)

Research Group
Tera-Hertz Sensing
Copyright
© 2018 J.A. Alfaro, P.M. Sberna, C. Silvestri, Massimo Mastrangeli, R. Ishihara, Pasqualina M Sarro
DOI related publication
https://doi.org/10.1109/MEMSYS.2018.8346611
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Publication Year
2018
Language
English
Copyright
© 2018 J.A. Alfaro, P.M. Sberna, C. Silvestri, Massimo Mastrangeli, R. Ishihara, Pasqualina M Sarro
Research Group
Tera-Hertz Sensing
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.@en
Volume number
2018-January
Pages (from-to)
547-550
ISBN (electronic)
978-1-5386-4782-0
Reuse Rights

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Abstract

A novel, simple, low-cost method for the void-free filling of high aspect ratio (HAR) through-silicon-vias (TSVs) is presented. For the first-time pure indium, a type-I superconductor metal, is used to fill HAR vias, 300 to 500 μm in depth and 50 to 100 μm in diameter. The low electrical resistivity achieved without sintering, its reproducibility and straightforward processing steps, and the short time required to fill large arrays of vias at wafer scale - all make this method one of the simplest and quickest options for filling HAR TSVs for MEMS 3D integration. Moreover, the low melting point (∼ 150 °C), malleability and superconductivity at 3.41 K make indium an interesting option in 3D interconnects for connecting quantum devices operating below 4 K.

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