Application of carrier-selective contacts in c-Si front/back contacted (FBC) and IBC solar cells with different thermal budget

Conference Paper (2018)
Author(s)

Gianluca Limodio (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Guangtao Yang (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Paul Procel (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Arthur Weeber (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Olindo Isabella (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Miro Zeman (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Photovoltaic Materials and Devices
DOI related publication
https://doi.org/10.1109/PVSC.2018.8548142 Final published version
More Info
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Publication Year
2018
Language
English
Research Group
Photovoltaic Materials and Devices
Article number
8548142
Pages (from-to)
3908-3913
ISBN (print)
978-1-5386-8530-3
ISBN (electronic)
978-1-5386-8529-7
Event
7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 (2018-06-10 - 2018-06-15), Waikoloa Village, United States
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Abstract

This paper shows the application of carrier-selective passivating contacts (CSPCs) in c-Si front-back contacted (FBC) and interdigitated back-contacted (IBC) solar cells with different thermal budgets. From lifetime analysis of our poly-Si and a-Si:H CSPCs, three FBC and one IBC architectures are devised to progressively increase efficiency (ç) and achieve record short-circuit current density (JSC): (i) a poly-poly cell (\eta = 19.6%); (ii) a selective emitter structure known as PeRFeCT (Passivated Emitter Rear and Front ConTacts, \eta = 20.0%); (iii) a so-called hybrid solar cell with poly-Si and a-Si:H CSPCs at rear and front, respectively (\eta = 21.0%); and (iv) an IBC solar cell with poly-Si CSPC (\eta = 23.0%, JSC = 42.2 mA/cm2).