Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces

Journal article (2011)

Authors

Andrea Illiberi External organisation
P Kudlacek External organisation
A.H.M. Smets Photovoltaic Materials and Devices - EEMCS
M Creatore External organisation
MCM van de Sanden External organisation
Research Group
Photovoltaic Materials and Devices (EEMCS) (TU Delft)
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Published Date

2011

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

Photovoltaic Materials and Devices

Abstract

We have found that controlled Ar ion bombardment enhances the degradation of a-Si:H based surface passivation of c-Si surfaces. The decrease in the level of surface passivation is found to be independent on the ion kinetic energy (7¿70 eV), but linearly proportional to the ion flux (6×1014¿6×1015¿ions¿cm¿2¿s¿1). This result suggests that the ion flux determines the generation rate of electron¿hole pairs in a-Si:H films, by which metastable defects are created at the H/a-Si:c-Si interface. Possible mechanisms for the ion induced generation of electron¿hole pairs are discussed.