Test-Fixture Design Flow for Broadband Validation of CMOS Device Models up to (sub)mm-Waves

Journal Article (2025)
Author(s)

C. De Martino (TU Delft - Electronics)

Ciro Esposito (Technische Universitat Dresden)

Eduard Satoshi Malotaux (Tusk IC)

Steffen Lehmann (GlobalFoundries)

Zhixing Zhao (GlobalFoundries)

Sven Mothes (GlobalFoundries)

Claudia Kretzschmar (GlobalFoundries)

E. Shokrolahzade (TU Delft - Electronics)

M. Schroter (Technische Universitat Dresden)

M. Spirito (TU Delft - Electronics)

Research Group
Electronics
DOI related publication
https://doi.org/10.1109/TMTT.2025.3586815
More Info
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Publication Year
2025
Language
English
Research Group
Electronics
Issue number
11
Volume number
73
Pages (from-to)
8956-8965
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Abstract

This work presents a structured, CAD-assisted design flow to realize broadband on-wafer calibration structures, validated in the prefabrication phase, and extract the intrinsic device response up to (sub)mm-waves. The strict requirements imposed by the design rule checks (DRCs) of 22 nm CMOS technology are incorporated during the design phase of the fixture by using a scripted connectable tile elements approach. The minimum dimension of a critical feature of the fixture is then identified using a newly defined metric based on the correspondence between the EM field distribution in the fixture versus a non-perturbed case of the same standard (STD) artifact. A simulation test bench environment, augmented with experimental data, is then used to add the uncertainties arising from three main error contributors: vector network analyzer (VNA) receiver noise, probe placement error, and calibration residual errors. Including these errors allows for the generation of pre-silicon numerical uncertainty bounds, which are benchmarked with experimental data using calibration quality metrics and device-level parameters. Measurement results ranging from 1 to 325 GHz are presented to demonstrate the validity of the proposed approach to establish the quality of on-wafer calibration approaches integrated in the back-end of line of Si-based technologies and to validate the compact model of CMOS devices up to (sub)mm-waves.

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