Characterization of low-loss hydrogenated amorphous silicon films for superconducting resonators

Conference paper (2020)

Authors

B.T. Buijtendorp Tera-Hertz Sensing - EEMCS
David Thoen Tera-Hertz Sensing - EEMCS
J.J.A. Baselmans Tera-Hertz Sensing - EEMCS
S. Vollebregt Sanitary Engineering - CEG
A. Endo Tera-Hertz Sensing - EEMCS
Research Group
Tera-Hertz Sensing (EEMCS) (TU Delft)
Copyright: © 2020 B.T. Buijtendorp, J. Bueno, David Thoen, V. Murugesan P.M. Sberna, J.J.A. Baselmans, S. Vollebregt, A. Endo
DOI
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https://doi.org/10.1117/12.2562233
Spectrometer Kinetic Inductance Detectors Submillimeter-wave Millimeter-wave Filter Bank Dielectric Loss Amorphous Silicon Two-level Systems
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Published Date

2020

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Tera-Hertz Sensing

Abstract

Superconducting resonators used in millimeter-submillimeter astronomy would greatly benefit from deposited dielectrics with a small dielectric loss. We deposited hydrogenated amorphous silicon films using plasma-enhanced chemical vapor deposition, at substrate temperatures of 100°C, 250°C and 350°C. The measured void volume fraction, hydrogen content, microstructure parameter, and bond-angle disorder are negatively correlated with the substrate temperature. All three films have a loss tangent below 10−5 for a resonator energy of 105 photons, at 120 mK and 4–7 GHz. This makes these films promising for microwave kinetic inductance detectors and on-chip millimeter-submilimeter filters.