A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

Journal Article (2023)
Author(s)

Jingping Zhang (Chongqing University)

Hou Cai Luo (Chongqing University)

Huan Wu (Chongqing University)

Zeping Wang (Chongqing University)

Bofeng Zheng (Chongqing University)

Guo-Qi Zhang (TU Delft - Electronic Components, Technology and Materials)

X.P. Chen (Chongqing University)

Research Group
Electronic Components, Technology and Materials
Copyright
© 2023 Jingping Zhang, Houcai Luo, Huan Wu, Zeping Wang, Bofeng Zheng, Kouchi Zhang, Xianping Chen
DOI related publication
https://doi.org/10.1088/1402-4896/ad049b
More Info
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Publication Year
2023
Language
English
Copyright
© 2023 Jingping Zhang, Houcai Luo, Huan Wu, Zeping Wang, Bofeng Zheng, Kouchi Zhang, Xianping Chen
Research Group
Electronic Components, Technology and Materials
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. @en
Issue number
12
Volume number
98
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Abstract

A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device. The gate-to-drain capacitance (Cgd) and gate-to-drain charge (Qgd) of the MSGT-MOSFET are significantly reduced in comparison with the double trench MOSFET (DT-MOSFET) and the conventional SGT MOSFET (CSGT-MOSFET), due to the reduction of the overlapping area of the split gate (SG) structure and drift region. Therefore, the obtained high frequency figure of merit (HF-FOM) defined as [Ron × Cgd] reduced by 23.9% compared with DT-MOSFET and CSGT-MOSFET. And the HF-FOM [Ron × Qgd] for the MSGT-MOSFET significantly decreased by 71% and 50%, respectively, compared to that of the DT-MOSFET and CSGT-MOSFET. Furthermore, the switching loss is also simulated and calculated. And the total switching loss of the proposed MSGT-MOSFET realizes 42.9% and 21.7% reduction in comparison with the DT-MOSFET and CSGT-MOSFET. The overall enhanced performances suggest that the MSGT-MOSFET is an excellent choice for high frequency power electronic applications.

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