Power and Thermal Cycling Testbed for End of Life Assessment of Semiconductor Devices

Conference Paper (2023)
Author(s)

Margo Molenaar (TU Delft - DC systems, Energy conversion & Storage)

Fazeh Kardan (TU Delft - DC systems, Energy conversion & Storage)

Aditya Shekhar (TU Delft - DC systems, Energy conversion & Storage)

P Bauer (TU Delft - DC systems, Energy conversion & Storage)

Research Group
DC systems, Energy conversion & Storage
Copyright
© 2023 M. Molenaar, F. Kardan Halvaei, A. Shekhar, P. Bauer
DOI related publication
https://doi.org/10.1109/IECON51785.2023.10312731
More Info
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Publication Year
2023
Language
English
Copyright
© 2023 M. Molenaar, F. Kardan Halvaei, A. Shekhar, P. Bauer
Research Group
DC systems, Energy conversion & Storage
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.@en
ISBN (print)
979-8-3503-3183-7
ISBN (electronic)
979-8-3503-3182-0
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Abstract

The reliability of semiconductor power devices can be studied by performing a thermal and power cycling test. In order to create the desired temperature cycles, there are four free variables to select during the power cycling test, namely the heating current, heating time, cooling time, and heatsink temperature. In this paper, the relation between the selected variables and the minimum and maximum junction temperature is extensively tested for the silicon IGBT with serial number IKP06N60T. Furthermore, the thermal model is discussed and verified and a rough estimate of the electrical resistance, thermal time constant, thermal resistance, and thermal capacitance are calculated.

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