Power and Thermal Cycling Testbed for End of Life Assessment of Semiconductor Devices

Conference paper (2023)

Authors

M. Molenaar DC systems, Energy conversion & Storage -

F. Kardan Halvaei DC systems, Energy conversion & Storage -

A. Shekhar DC systems, Energy conversion & Storage -

P. Bauer DC systems, Energy conversion & Storage -

Research Group

DC systems, Energy conversion & Storage () (TU Delft)

DOI: https://doi.org/10.1109/IECON51785.2023.10312731

Reliability Power cycling test Silicon IGBT Thermal model Silicon-Carbide MOSFET Thermal device characteristics Lifetime testbed

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Published Date

2023

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

DC systems, Energy conversion & Storage

Abstract

The reliability of semiconductor power devices can be studied by performing a thermal and power cycling test. In order to create the desired temperature cycles, there are four free variables to select during the power cycling test, namely the heating current, heating time, cooling time, and heatsink temperature. In this paper, the relation between the selected variables and the minimum and maximum junction temperature is extensively tested for the silicon IGBT with serial number IKP06N60T. Furthermore, the thermal model is discussed and verified and a rough estimate of the electrical resistance, thermal time constant, thermal resistance, and thermal capacitance are calculated.

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- Embargo expired in 16-05-2024