Performance Evaluation of an Electric Vehicle Traction Drive using Si/SiC Hybrid Switches

Conference Paper (2021)
Author(s)

Changyu Tan (Student TU Delft)

Marco Stecca (TU Delft - DC systems, Energy conversion & Storage)

Thiago Batista Soeiro (TU Delft - DC systems, Energy conversion & Storage)

J. Dong (TU Delft - DC systems, Energy conversion & Storage)

Pavol Bauer (TU Delft - DC systems, Energy conversion & Storage)

Research Group
DC systems, Energy conversion & Storage
Copyright
© 2021 Changyu Tan, M. Stecca, Thiago B. Soeiro, J. Dong, P. Bauer
DOI related publication
https://doi.org/10.1109/PEMC48073.2021.9432574
More Info
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Publication Year
2021
Language
English
Copyright
© 2021 Changyu Tan, M. Stecca, Thiago B. Soeiro, J. Dong, P. Bauer
Research Group
DC systems, Energy conversion & Storage
Bibliographical Note
Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.@en
Pages (from-to)
278-283
ISBN (print)
978-1-7281-5661-3
ISBN (electronic)
978-1-7281-5660-6
Reuse Rights

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Abstract

The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET forming a so called hybrid switch (HyS) can be used to exploit the advantageous features of both semiconductor and materials technologies. In this paper, a HyS-based inverter designed for the application of Electric Vehicle (EV) traction is compared to the conventional inverter assembled with Si-based IGBTs and SiC-based MOS-FETs. According to different standardized driving cycles, EVs operate in low partial load for a considerable amount of the time. Therefore, in this application, semiconductor conduction losses can be considerably reduced when unipolar switches such as MOSFETs are used. All in all, this work shows that the HyS configuration constitutes a good compromise between efficiency and cost when compared to the solution implementing only Si-based IGBT or solely SiC-based MOSFETs.

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