Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry.
Journal Article
(2000)
Author(s)
ZX Jiang (External organisation)
PFA Alkemade (TU Delft - Old - sect Electronic Materials (NS/EM))
CH Tung (External organisation)
JLF Wang (External organisation)
Research Group
Old - sect Electronic Materials (NS/EM)
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Publication Year
2000
Research Group
Old - sect Electronic Materials (NS/EM)
Bibliographical Note
Mar/Apr 2000@en
Issue number
2
Volume number
18
Pages (from-to)
706-712
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