Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry.

Complex roughening of Si under oblique bombardment by low-energy oxygen ions.

Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry.

Depth profile analysis of Si with low-energy and oblique O2+ beams.

The surface transient in Si for SIMS with oblique low-energy o2+ beams.

Anomalous surface transient of boron in Si.

Secondary ion mass spectrometry and atomic force spectroscopy studies of surface roughening, erosion rate change and depth resolurion in Si during 1 keV 60 degrees O2+ bombardment with oxygen flooding

The complex formation of ripples during depth profiling of Si with low energy, grazing oxygen beams

Ultra-high depth resolution with a grazing sub-keV oxygen beam in a magnetic sector SIMS

SIMS Meting aan SiGe (B) multilaag

Erosion rate change and surface roughening in Si during oblique O2+ bombardment with oxygen flooding

Depth resolution for Ge in Si with low energy and grazing O2+ beams

Ultra-high depth resolution analysis with a magnetic-sector SIMS

Ultra-high depth resolution RBS and SIMS of the modification of a Ge delta in Si during 2 keV O2+ sputtering

Ultra-high depth resolution SIMS with sub-kev grazing O2+ beams

High depth resolution SIMS analysis with low-energy grazing O2+ beams

A noval approach for the determination of the actual incidence angle in a magnetic-sector SIMS instrument

Ionization probability of secondary Cs under Cs+ bombardment