Apparent depths of B and Ge deltas in Si as measured by secondary ion mass spectrometry.

Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry.

Complex roughening of Si under oblique bombardment by low-energy oxygen ions.

The surface transient in Si for SIMS with oblique low-energy o2+ beams.

Anomalous surface transient of boron in Si.

Depth profile analysis of Si with low-energy and oblique O2+ beams.

Ultra-high depth resolution with a grazing sub-keV oxygen beam in a magnetic sector SIMS

The complex formation of ripples during depth profiling of Si with low energy, grazing oxygen beams

Secondary ion mass spectrometry and atomic force spectroscopy studies of surface roughening, erosion rate change and depth resolurion in Si during 1 keV 60 degrees O2+ bombardment with oxygen flooding

Erosion rate change and surface roughening in Si during oblique O2+ bombardment with oxygen flooding

Depth resolution for Ge in Si with low energy and grazing O2+ beams

SIMS Meting aan SiGe (B) multilaag

Ultra-high depth resolution analysis with a magnetic-sector SIMS

Ultra-high depth resolution RBS and SIMS of the modification of a Ge delta in Si during 2 keV O2+ sputtering

Ultra-high depth resolution SIMS with sub-kev grazing O2+ beams

A noval approach for the determination of the actual incidence angle in a magnetic-sector SIMS instrument

High depth resolution SIMS analysis with low-energy grazing O2+ beams

Ionization probability of secondary Cs under Cs+ bombardment