Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium

Journal Article (2019)
Author(s)

N. W. Hendrickx (TU Delft - QCD/Veldhorst Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

M. L.V. Tagliaferri (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Veldhorst Lab)

M. Kouwenhoven (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

R. Li (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Veldhorst Lab)

D. P. Franke (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Veldhorst Lab, Kavli institute of nanoscience Delft)

A. Sammak (TU Delft - Business Development)

A. Brinkman (University of Twente)

G. Scappucci (TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

M. Veldhorst (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Veldhorst Lab, Kavli institute of nanoscience Delft)

Research Group
QCD/Veldhorst Lab
DOI related publication
https://doi.org/10.1103/PhysRevB.99.075435
More Info
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Publication Year
2019
Language
English
Research Group
QCD/Veldhorst Lab
Issue number
7
Volume number
99
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Abstract

We fabricate Josephson field-effect transistors in germanium quantum wells contacted by superconducting aluminum and demonstrate supercurrents carried by holes that extend over junction lengths of several micrometers. In superconducting quantum point contacts we observe discretization of supercurrent, as well as Fabry-Pérot resonances, demonstrating ballistic transport. The magnetic field dependence of the supercurrent follows a clear Fraunhofer-like pattern, and Shapiro steps appear upon microwave irradiation. Multiple Andreev reflections give rise to conductance enhancement and evidence a transparent interface, confirmed by analyzing the excess current. These demonstrations of ballistic superconducting transport are promising for hybrid quantum technology in germanium.

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