Characterization of PCB Embedded Package Materials for SiC MOSFETs

Journal article (2019)

Authors

F. Hou DC systems, Energy conversion & Storage - EEMCS , Institute of Microelectronics of Chinese Academy of Sciences
W. Wang DC systems, Energy conversion & Storage - EEMCS
Tingyu Lin National Center for Advanced Packaging
Liqiang Cao Chinese Academy of Sciences, National Center for Advanced Packaging
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Jan Abraham Ferreira ESE Programmes - EEMCS
Research Group
DC systems, Energy conversion & Storage (EEMCS) (TU Delft)
Copyright: © 2019 F. Hou, W. Wang, Tingyu Lin, Liqiang Cao, Kouchi Zhang, Jan Abraham Ferreira
DOI
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https://doi.org/10.1109/TCPMT.2019.2904533
High voltage Material characterization High temperature Printed circuit board (PCB) embedded package Silicon carbide (SiC) MOSFETs
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Published Date

2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Electrical Sustainable Energy

Research Group

DC systems, Energy conversion & Storage

Abstract

In this paper, a novel fan-out panel-level printed circuit board (PCB) embedded package technology for silicon carbide (SiC) MOSFET power module is presented to address parasitic inductances, heat dissipation, and reliability issues that are inherent with aluminum wires used in conventional packaging scheme. To withstand high temperature beyond 175 °C and high voltage over 1.2 kV and improve thermomechanical reliability of the fan-out panel-level PCB embedded SiC power module, bismaleimide-triazine (BT) laminate and prepreg with high-temperature stability, high dielectric strength, coefficient of thermal expansion (CTE) matching with SiC, and high T-g are selected as PCB embedded package materials. Then, high-temperature stabilities, dielectric breakdown strength, and thermomechanical performances of the embedded materials are characterized. The experimental results show that the PCB embedded materials can withstand high temperature beyond 200 °C and a high voltage above 1.2 kV. T-g is as high as over 260 °C, and CTE is matching with SiC. Besides, in order to provide one guideline for the high-temperature and high-pressure laminating process during the PCB embedded SiC MOSFETs packaging, cure kinetics of BT prepreg are analyzed. The results show that 1-h curing time at 280 °C curing temperature and 2-h curing time at 210 °C curing temperature can ensure the full cure of the BT prepreg.