Design and comparison of a 10-kW interleaved boost converter for PV application using Si and SiC devices
G.R. Chandra Mouli (TU Delft - DC systems, Energy conversion & Storage)
Jos H. Schijffelen (Power Research Electronics BV)
Pavol Bauera (TU Delft - DC systems, Energy conversion & Storage)
M. Zeman (TU Delft - Electrical Sustainable Energy)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
Grid-connected photovoltaic (PV) inverters have a dc/dc converter connected to the PV for executing the maximum power point tracking. The design of an interleaved boost converter (IBC) with three switching legs for a 10-kW PV inverter is presented in this paper. This paper shows how the use of silicon carbide (SiC) switches and powdered iron core inductors enables the operation of the converter at a higher switching frequency and when increasing the converter power density. The IBC is designed using a 1.2-kV SiC MOSFET and Schottky diodes and Kool Mμ powdered iron inductors. The design is compared with an IBC built with a silicon (Si) IGBT, fast recovery Si diodes, and ferrite cores. The use of SiC devices reduces the switching loses drastically and there are no reverse recovery losses, resulting in improved efficiency. The higher frequency and higher saturation flux density of the powdered iron core enable the reduction in core size by three times. A 10-kW prototype is built and tested for both the Si and SiC designs and compared with theoretical estimations.