Print Email Facebook Twitter A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology Title A Highly Linear Temperature Sensor Operating up to 600°C in a 4H-SiC CMOS Technology Author Mo, J. (TU Delft Electrical Engineering, Mathematics and Computer Science) LI, J. (TU Delft Electrical Engineering, Mathematics and Computer Science) Zhang, Y. (TU Delft Electrical Engineering, Mathematics and Computer Science) Romijn, J. (TU Delft Electrical Engineering, Mathematics and Computer Science) May, Alexander (Fraunhofer Institute for Integrated Systems and Devices Technology IISB) Erlbacher, Tobias (Fraunhofer Institute for Integrated Systems and Devices Technology IISB) Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials) Vollebregt, S. (TU Delft Electronic Components, Technology and Materials) Faculty Electrical Engineering, Mathematics and Computer Science Date 2023 Abstract In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density is 0.53 mA/cm2. The maximum sensitivity of the p-n diode is 3.04 mV/°C. The temperature sensor is fully compatible with Fraunhofer Institute (FHG) IISB's open SiC CMOS (complementary metal-oxide-semiconductor) technology, thus enabling the monolithic integration with SiC readout circuits for high-temperature applications. The sensor also features a simple fabrication process. To our knowledge, the presented device is the first SiC diode temperature sensor that does not require a mesa etch or backside contacts. Subject high temperatureLinearityp-n diodeSchottky diodesSensitivitySilicon carbideTemperature distributionTemperature measurementtemperature sensorTemperature sensors To reference this document use: http://resolver.tudelft.nl/uuid:8ce76ad2-361d-4555-84da-2bb21571ee59 DOI https://doi.org/10.1109/LED.2023.3268334 Embargo date 2023-10-09 ISSN 0741-3106 Source IEEE Electron Device Letters, 44 (6), 995-998 Bibliographical note Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public. Part of collection Institutional Repository Document type journal article Rights © 2023 J. Mo, J. LI, Y. Zhang, J. Romijn, Alexander May, Tobias Erlbacher, Kouchi Zhang, S. Vollebregt Files PDF A_Highly_Linear_Temperatu ... nology.pdf 978.61 KB Close viewer /islandora/object/uuid:8ce76ad2-361d-4555-84da-2bb21571ee59/datastream/OBJ/view