An analog to digital converter in a SiC CMOS technology for high-temperature applications

An analog to digital converter in a SiC CMOS technology for high-temperature applications

Mo, J. (TU Delft Electronic Components, Technology and Materials)
Niu, Yunfan (Student TU Delft)
May, Alexander (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Rommel, Mathias (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Rossi, Chiara (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Romijn, J. (TU Delft Microelectronics)
Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)
Vollebregt, S. (TU Delft Electronic Components, Technology and Materials)

Microelectronics

2024

Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal-oxide-semiconductor technology now available through Europractice. The MOSFET component in this technology was measured up to 500 °C, and the key parameters, such as threshold voltage, field-effect mobility, and channel-length modulation parameters, were extracted. A 4-bit flash data converter, consisting of 266 transistors, is implemented with this technology and demonstrates correct operation up to 400 °C. Finally, the gate oxide quality is investigated by time-dependent dielectric breakdown measurements at 500 °C. A field-acceleration factor of 4.4 dec/(MV/cm) is obtained by applying the E model.

http://resolver.tudelft.nl/uuid:1d4c5cc5-2c94-4ebf-b70a-5cc620d4807d

https://doi.org/10.1063/5.0195013

0003-6951

Applied Physics Letters, 124 (15)

Institutional Repository

journal article

© 2024 J. Mo, Yunfan Niu, Alexander May, Mathias Rommel, Chiara Rossi, J. Romijn, Kouchi Zhang, S. Vollebregt