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Group-theoretical analysis of double acceptors in a magnetic field: Identification of the Si:B+ ground state
Stark effect in shallow impurities in Si
Conductance distribution in nanometer-sized semiconductor devices due to dopant statistics
Direct observation by resonant tunneling of the B+ level in a o-doped silicon barrier
Gate-induced ionization of single dopant atoms
Scaling of nano-Schottky-diodes
Enhanced tunneling across nanometer-scale metal–semiconductor interfaces
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