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Excimer laser crystallization of InGaZnO4 on SiO2 substrate

Chen, T. (author), Wu, M.Y. (author), Ishihara, R. (author), Nomura, K. (author), Kamiya, T. (author), Hosono, H. (author), Beenakker, C.I.M. (author)

In this paper, we were able to crystallize InGaZnO4 (IGZO) by excimer laser on SiO2 substrate. It was observed that uniform [0001] textured polycrystalline IGZO film has been obtained without any grain boundaries and oxygen vacancies on SiO2 substrate. This process is very promising in fabricating high quality IGZO thin film transistors (TFT) at...

journal article 2011

document

Stress Induced Orientation Control by Metal Induced Lateral Crystallization

Chen, T. (author), Ishihara, R. (author), Beenakker, C.I.M. (author)

journal article 2008

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Single-Grain Si TFTs Fabricated by Liquid-Si and Long-Pulse Excimer-Laser

Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author)

Solution process of silicon using liquid-Si is attractive for fabrication of high-speed flexible electronics. We have fabricated single-grain Si TFTs on location-controlled Si grains with longpulse excimer laser crystallization of spin-coated liquid Si film. The maximum grain diameter is 3.5?m, and the mobilities for electrons and holes are...

journal article 2012

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(100)-textured self-assembled square-shaped polycrystalline silicon grains by multiple shot excimer laser crystallization

He, M. (author), Ishihara, R. (author), Metselaar, W. (author), Beenakker, K. (author)

Strong preference for (100) surface and in-plane orientations has been observed in polycrystalline silicon film on SiO2 after crystallization with multiple excimer laser pulses. Laser induced periodic surface structure (LIPSS) is developed in the film, constructing self-assembled square-shaped grains. The clear texture can be observed in a...

journal article 2006

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Thick Single Grain Silicon Formation with Microsecond Green Laser Crystallization

Arslan, A. (author), Kahlert, H.J. (author), Oesterlin, P. (author), Mofrad, D.T. (author), Ishihara, R. (author), Beenakker, C.I.M. (author)

625 nm thick a-Si layer was crystallized by using microsecond pulsed green laser with wavelength of 515 nm. At least 8 ?m size grains were formed using location controlled single grain technique at room temperature. Energy density window for crystallization and ablation were compared for pulse durations of 300 ns, 1000 ns and 1200 ns.

journal article 2012

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Single-Grain Germanium TFTs

Ishihara, R. (author), Chen, T. (author), Baiano, A. (author), Mofrad, M.R. (author), Beenakker, C.I.M. (author)

We review our recent achievements in location-control of Ge grains and high performance single-grain (SG) Ge thin film transistor (TFT) fabricated inside a Ge grain. Large Ge grains having a grain size of 10 µm were obtained at predetermined positions by the µ-Czochralski process using excimer-laser and sputtered a-Ge layer. TFTs were fabricated...

journal article 2011

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High Quality SiO2 Deposited at 80°C by Inductively Coupled Plasma Enhanced CVD for Flexible Display Application

Chen, T. (author), Ishihara, R. (author), Beenakker, K. (author)

In this article, we investigated the high quality SiO2 deposited at 80°C by inductively coupled plasma enhanced chemical vapor deposition (CVD). The interface trap density of 1.48×1010 cm?2 eV?1 and breakdown voltage of 5.6 MV/cm were realized successfully despite the low deposition temperature. Thin film transistors (TFTs) have been fabricated...

journal article 2010

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Single Grain Si TFTs for RF and 3D ICs

Ishihara, R. (author), Baiano, A. (author), Chen, T. (author), Derakhshandeh, J. (author), Tajari Mofrad, M.R. (author), Danesh, M. (author), Saputra, N. (author), Long, J. (author), Beenakker, C.I.M. (author)

Single-grain Si TFTs have been fabricated using accurate 2D location control of large Si grain with the ?-Czochralski process. TFTs fabricated inside the crystalline islands of 6 ?m show a mobility (600cm2/Vs) as high as that of the SOI counterpart, despite of the low-temperature (<350oC) process. By applying a tensile stress into the grain, the...

journal article 2009

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Thermal conductivity of low temperature grown vertical carbon nanotube bundles measured using the three-? method

Vollebregt, S. (author), Banerjee, S. (author), Beenakker, K. (author), Ishihara, R. (author)

The thermal conductivity of as-grown vertical multi-walled carbon nanotubes (CNT) bundles fabricated at low temperature (500?°C) was measured using a vertical 3?-method. For this, CNT were selectively grown inside an oxide opening and sandwiched between two metal electrodes. The validity of the method was confirmed by both measurements as...

journal article 2013

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Single-grain Si TFTs with ECR-PECVD gate SiO/sub 2/

Ishihara, R. (author), Hiroshima, Y. (author), Abe, D. (author), van Dijk, B.D. (author), van der Wilt, P.C. (author), Higashi, S. (author), Inoue, S. (author), Shimoda, T. (author), Metselaar, J.W. (author), Beenakker, C.I.M. (author)

journal article 2004

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Investigation of local electrical properties of coincidence-site-lattice boundaries in location-controlled silicon islands using scanning capacitance microscopy

Matsuki, N. (author), Ishihara, R. (author), Baiano, A. (author), Beenakker, C.I.M. (author)

We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the ?-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of...

journal article 2008

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Preferred <100> Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation

He, M. (author), Ishihara, R. (author), Metselaar, W. (author), Beenakker, C.I.M. (author)

Clear preference of <100>- orientation in self-assembled poly- Si is observed for the first time not only in surface, but also in-plane orientations. This textured poly-Si can be used for TFT active channel, expecting a high performance with an excellent uniformity; or can be used as a seed layer for orientation controlling.

journal article 2006

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Single-grain Si thin-film transistors for monolithic 3D-ICs and flexible electronics

Ishihara, R. (author), Zhang, J. (author), Trifunovic, M. (author), Derakhshandeh Kheljani, J. (author), Golshani, N. (author), Tajari Mofrad, M.R. (author), Chen, T. (author), Beenakker, C.I.M. (author), Shimoda, T. (author)

We review our recent achievements in monolithic 3D-ICs and flexible electronics based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. Based on pulsed-laser crystallization and submicron sized cavities made in the substrate, amorphous-Si precursor film was converted into poly-Si having grains that...

journal article 2014

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Dependence of single-crystalline Si TFT characteristics on the channel position inside a location-controlled grain

Rana, V. (author), Ishihara, R. (author), Hiroshima, Y. (author), Abe, D. (author), Inoue, S. (author), Shimoda, T. (author), Metselaar, W. (author), Beenakker, K. (author)

journal article 2005

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SPICE Modeling of Single-Grain Si TFTs using BSIMSOI

Baiano, A. (author), Ishihara, R. (author), Saputra, N. (author), Long, J. (author), Karaki, N. (author), Inoue, S. (author), Metselaar, W. (author), Beenakker, C.I.M. (author)

Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n- and p-channel DC and low frequency AC conditions by comparison with measurement...

journal article 2007

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Preferred <100> Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation

He, M. (author), Ishihara, R. (author), Metselaar, W. (author), Beenakker, K. (author)

journal article 2006

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Single-grain Si thin-film transistors on flexible polyimide substrate fabricated from doctor-blade coated liquid-Si

Zhang, J. (author), Trifunovic, M. (author), Van der Zwan, M. (author), Takagishi, H. (author), Kawajiri, R. (author), Shimoda, T. (author), Beenakker, C.I.M. (author), Ishihara, R. (author)

Solution process of silicon will provide high-speed transistor fabrication with low-cost by, for example, roll-to-roll process. In this paper, a low-temperature process (350?°C) is reported for fabrication of high-quality Si devices on a polyimide substrate from doctor-blade coated liquid-Si. With this method, different semiconductor devices...

journal article 2013

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Design and fabrication of single grain TFTs and lateral photodiodes for low dose X-ray detection

Arslan, A. (author), Ishihara, R. (author), Derakhshandeh, J. (author), Beenakker, C.I.M. (author)

Design, fabrication and measurement results of single grain (SG) lateral PIN photodiodes and SG thin film transistors (TFT) are reported in this paper. Devices were developed to be used in indirect X-ray image sensor pixel design. We have controlled position of 6 ?m x 6 ?m silicon grains with excimer-laser crystallization of a-Si film. Lateral...

conference paper 2011

document

Thick single grain silicon formation with microsecond green laser crystallization (abstract)

Arslan, A. (author), Kahlert, H.J. (author), Oesterlin, P. (author), Mofrad, D.T. (author), Ishihara, R. (author), Beenakker, C.I.M. (author)

conference paper 2012

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Single-grain Si TFTs for high-speed flexible electronics

Ishihara, R. (author), Chen, T. (author), Van der Zwan, M. (author), He, M. (author), Schellevis, H. (author), Beenakker, K. (author)

Existent flat-panel display is mechanically stiff because it requires external connection of IC chips. At its present stage, displays with a-Si, metal oxide semiconductor or organic TFTs require still external connection of data driver and controllers, because of their low carrier mobilities. We will review our recent progress on direct...

conference paper 2011