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Baiano, A. (author), Ishihara, R. (author), Saputra, N. (author), Long, J. (author), Karaki, N. (author), Inoue, S. (author), Metselaar, W. (author), Beenakker, C.I.M. (author)
Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by ยต-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n- and p-channel DC and low frequency AC conditions by comparison with measurement...
journal article 2007
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Rana, V. (author), Ishihara, R. (author), Hiroshima, Y. (author), Abe, D. (author), Inoue, S. (author), Shimoda, T. (author), Metselaar, W. (author), Beenakker, K. (author)
journal article 2005
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Ishihara, R. (author), Hiroshima, Y. (author), Abe, D. (author), van Dijk, B.D. (author), van der Wilt, P.C. (author), Higashi, S. (author), Inoue, S. (author), Shimoda, T. (author), Metselaar, J.W. (author), Beenakker, C.I.M. (author)
journal article 2004