Jiang, Jing (author), Wang, S. (author), Liu, X. (author), Liu, Jianhui (author), Li, Jun (author), Zhou, Dexiang (author), Zhang, Kouchi (author), Ye, H. (author), Tan, C. (author) High electric-field stress is an effective solution to the recovery of irradiated devices. In this paper, the dependence of the recovery level on the magnitude of gate voltage and duration is investigated. Compared with the scheme of high gate-bias voltage with a short stress time, the transfer characteristics are significantly recovered by...
journal article 2022
