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Reverse Recovery Optimization of Multiepi Superjunction MOSFET Based on Tunable Doping Profile
Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress
Study on Reverse Recovery of a P-pillar Tunable Super-Junction MOSFET*
A TCAD Simulation Study on the Short-circuit Performance of 650V P-pillar Offset Super-junction MOSFET
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