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Yin, Xiaole (author), Chen, Xi (author), Jiang, Xiao Tao (author), Yang, Ying (author), Li, Bing (author), Shum, Marcus Ho Hin (author), Schmitt, H. (author), Cha, Chang Jun (author), van Loosdrecht, Mark C.M. (author)Surveillance of antibiotic resistance genes (ARGs) has been increasingly conducted in environmental sectors to complement the surveys in human and animal sectors under the "One-Health"framework. However, there are substantial challenges in comparing and synthesizing the results of multiple studies that employ different test methods and...journal article 2023
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Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Y. (author), Yang, Gaiying (author), Yu, H. (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H 2 response at high...journal article 2020
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Sokolovskij, R. (author), Zhang, Jian (author), Zheng, Hongze (author), Li, Wenmao (author), Jiang, Yang (author), Yang, Gaiying (author), Yu, Hongyu (author), Sarro, Pasqualina M (author), Zhang, Kouchi (author)The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H2 response at high...journal article 2020