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Zhang, Y. (author), Du, L. (author), Bäcke, Olof (author), Kalbfleisch, Sebastian (author), Zhang, Kouchi (author), Vollebregt, S. (author), Hörnqvist Colliander, Magnus (author)As the dimensions of interconnects in integrated circuits continue to shrink, an urgent need arises to understand the physical mechanism associated with electromigration. Using x-ray nanodiffraction, we analyzed the stresses in Blech-structured pure Cu lines subjected to different electromigration conditions. The results suggest that the...journal article 2024
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Mo, J. (author), Shankar, S. (author), Pezone, R. (author), Zhang, Kouchi (author), Vollebregt, S. (author)Silicon carbide (SiC) is recognized as an excellent material for microelectromechanical systems (MEMS), especially those operating in challenging environments, such as high temperature, high radiation, and corrosive environments. However, SiC bulk micromachining is still a challenge, which hinders the development of complex SiC MEMS. To...journal article 2024
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Mo, J. (author), Niu, Yunfan (author), May, Alexander (author), Rommel, Mathias (author), Rossi, Chiara (author), Romijn, J. (author), Zhang, Kouchi (author), Vollebregt, S. (author)Integrated circuits based on wide bandgap semiconductors are considered an attractive option for meeting the demand for high-temperature electronics. Here, we report an analog-to-digital converter fabricated in a silicon carbide complementary metal-oxide-semiconductor technology now available through Europractice. The MOSFET component in this...journal article 2024
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Mo, J. (author), LI, J. (author), Zhang, Y. (author), Romijn, J. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Vollebregt, S. (author)In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density...journal article 2023
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Sattari, R. (author), Hu, D. (author), Liu, X. (author), van Zeijl, H.W. (author), Vollebregt, S. (author), Zhang, Kouchi (author)The rapid development of power electronics has challenged the thermal integrity of semiconductor packaging. Further developments in this domain can be supported significantly by utilizing fast and flexible thermal characteristic evaluation. This study employs the transient dual interface method (TDIM) to characterize and compare the thermal...journal article 2023
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van Ginkel, H.J. (author), Mitterhuber, Lisa (author), van de Putte, Marijn Willem (author), Huijben, Mark (author), Vollebregt, S. (author), Zhang, Kouchi (author)Reducing the thermal conductivity of thermoelectric materials has been a field of intense research to improve the efficiency of thermoelectric devices. One approach is to create a nanostructured thermoelectric material that has a low thermal conductivity due to its high number of grain boundaries or voids, which scatter phonons. Here, we present...journal article 2023
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Copper Nanoparticle Sintering Enabled Hermetic Packaging With Fine Sealing Ring for MEMS ApplicationHu, D. (author), Shah, M.B. (author), Fan, J. (author), Vollebregt, S. (author), Zhang, Kouchi (author)Driving by the increased demand for hermetic packaging in the more than Moore (MtM) roadmap, a Cu nanoparticle sintering-enabled hermetic sealing solution was developed with a small-size sealing ring. The developed technology simplifies microfabrication and requires less surface roughness using a sinterable Cu nanoparticle paste. A 50μm size...journal article 2023
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Cui, Z. (author), Fan, X. (author), Zhang, Y. (author), Vollebregt, S. (author), Fan, J. (author), Zhang, Kouchi (author)This paper presented integrated electromigration (EM) studies through experiment, theory, and simulation. First, extensive EM tests were performed using Blech and standard wafer-level electromigration acceleration test (SWEAT)-like structures, which were fabricated on four-inch wafers. Second, a molecular dynamics (MD) simulation-based...journal article 2023
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Cui, Z. (author), Fan, X. (author), Zhang, Y. (author), Vollebregt, S. (author), Fan, J. (author), Zhang, Kouchi (author)This paper presented a comprehensive experimental and simulation study for thermomigration (TM) accompanying electromigration (EM) at elevated current densities. Both Blech and standard wafer-level electromigration acceleration test (SWEAT)-like test structures, with aluminum (Al) as a carrier, were used for testing and analysis. In Part I of...journal article 2023
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Romijn, J. (author), Vollebregt, S. (author), de Bie, Vincent G. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and miniaturize individual satellites to make access to space cost effective. To enable this next...journal article 2023
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Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a...journal article 2022
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Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, Johan (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are...journal article 2022
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Cui, Z. (author), Zhang, Y. (author), Hu, D. (author), Vollebregt, S. (author), Fan, J. (author), Fan, X. (author), Zhang, Kouchi (author)Understanding the atomic diffusion features in metallic material is significant to explain the diffusion-controlled physical processes. In this paper, using electromigration experiments and molecular dynamic (MD) simulations, we investigate the effects of grain size and temperature on the self-diffusion of polycrystalline aluminium (Al). The...journal article 2022
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van Ginkel, H.J. (author), Vollebregt, S. (author), Schmidt-Ott, A. (author), Zhang, Kouchi (author)A method is presented to directly measure the mass output of an impaction printer coupled with a spark ablation generator. It is based on a quartz crystal microbalance and shown to be reliable in quantifying mass deposition rate. Here, the method is demonstrated with an Au nanoparticle aerosol synthesized under several spark ablation and...journal article 2022
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Romijn, J. (author), Sanseven, Seçil (author), Zhang, Kouchi (author), Vollebregt, S. (author), Sarro, Pasqualina M (author)An angle sensitive optical sensor without conventional optics is presented in this article. The reported device omits the need for adding 3-D optics in postprocessing by monolithic integration of complimentary metal-oxide semiconductor compatible diffraction grating layers, which cuts down the fabrication costs and allows for miniaturization...journal article 2022
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Tang, H. (author), Gao, Chenshan (author), Yang, Huiru (author), Sacco, L.N. (author), Sokolovskij, R. (author), Ye, H. (author), Vollebregt, S. (author), Fan, X. (author), Zhang, Kouchi (author)In this paper, tin oxidation (SnO x )/tin-sulfide (SnS) heterostructures are synthesized by the post-oxidation of liquid-phase exfoliated SnS nanosheets in air. We comparatively analyzed the NO2 gas response of samples with different oxidation levels to study the gas sensing mechanisms. The results show that the samples oxidized at 325 °C are...journal article 2021
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Mo, J. (author), Middelburg, L.M. (author), Morana, B. (author), van Zeijl, H.W. (author), Vollebregt, S. (author), Zhang, Kouchi (author)The application of pressure sensors in harsh environments is typically hindered by the stability of the material over long periods of time. This work focuses on the design and fabrication of surface micromachined Pirani gauges which are designed to be compatible with state-of-the-art Silicon Carbide CMOS technology. Such an integrated...journal article 2021
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Hu, D. (author), Gu, Tijian (author), Cui, Z. (author), Vollebregt, S. (author), Fan, Xuejun (author), Zhang, Kouchi (author), Fan, J. (author)In high power electronics packaging, sintered silver nanoparticle joints suffer from thermal-humidity- electrical-chemical joint driven corrosion in extreme environments. In this paper, we conducted aging tests on sintered silver nanoparticles under high-temperature, high-humidity, and high-sulphur conditions. The results show that: (1) the...journal article 2021
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Mirza Gheytaghi, Amir (author), Ghaderi, M. (author), Vollebregt, S. (author), Ahmadi, M. (author), Wolffenbuttel, R.F. (author), Zhang, Kouchi (author)In this paper, the growth of optimized vertically aligned multi-walled carbon nanotube (VA-MWCNT) forests by LPCVD method for use in a large-area absorber in infrared detectors is presented. The effect of synthesis temperature (500−700 °C) and time (1−10 min) on the optical absorption coefficient in the infrared (2−20 μm) is investigated by...journal article 2020
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Mirza Gheytaghi, Amir (author), Poelma, René H. (author), Sacco, L.N. (author), Vollebregt, S. (author), Zhang, Kouchi (author)In this paper, the compressive stress of pristine and coated vertically-aligned (VA) multi-walled (MW) carbon nanotube (CNT) pillars were investigated using flat-punch nano-indentation. VA-MWCNT pillars of various diameters (30–150 µm) grown by low-pressure chemical vapor deposition on silicon wafer. A conformal brittle coating of niobium...journal article 2020
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