Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

Romijn, J. (TU Delft Microelectronics)
Vollebregt, S. (TU Delft Electronic Components, Technology and Materials)
Middelburg, L.M. (TU Delft Electronic Components, Technology and Materials)
el Mansouri, B. (TU Delft Electronic Components, Technology and Materials)
van Zeijl, H.W. (TU Delft Electronic Components, Technology and Materials)
May, Alexander (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Erlbacher, Tobias (Fraunhofer Institute for Integrated Systems and Devices Technology IISB)
Leijtens, Johan (Lens R&D BV)
Zhang, Kouchi (TU Delft Electronic Components, Technology and Materials)
Sarro, Pasqualina M (TU Delft Electronic Components, Technology and Materials)

Microelectronics

2022

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are significant improvements over previous reports. UV optoelectronics have applications in flame detection, satellites, astronomy, UV photography, and healthcare. The complexity of this optoelectronic system paves the way for new applications such harsh environment microcontrollers.

OA-Fund TU Delft

http://resolver.tudelft.nl/uuid:9d4da9d5-685d-4be6-8dbc-762b7a5ccbf1

https://doi.org/10.1038/s41378-022-00446-3

2096-1030

Microsystems & Nanoengineering, 8 (1)

Institutional Repository

journal article

© 2022 J. Romijn, S. Vollebregt, L.M. Middelburg, B. el Mansouri, H.W. van Zeijl, Alexander May, Tobias Erlbacher, Johan Leijtens, Kouchi Zhang, Pasqualina M Sarro