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van Ginkel, H.J. (author), Roels, P. (author), Boeije, M.F.J. (author), Pfeiffer, T.V. (author), Vollebregt, S. (author), Zhang, Kouchi (author), Schmidt-Ott, A. (author)Porous layers composed of nanoparticles (NPs) have a wide range of (potential) applications including catalysts, (chemical) sensors, thermoelectric materials and electronics. These application domains will profit strongly from our NP printing process which is flexible with respect to i) the composition of the NPs and ii) the possibility of...abstract 2020
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Romijn, J. (author), Middelburg, L.M. (author), Vollebregt, S. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...conference paper 2021
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Zhang, Y. (author), Mo, J. (author), Cui, Z. (author), Vollebregt, S. (author), Zhang, Kouchi (author)The continuous downscaling of microelectronics has introduced many reliability issues on interconnect. Electromigration and dewetting are major reliability concerns in high-temperature micro- and nanoscale devices. In this paper, the local dewetting of copper thin film during the electromigration test was first found and investigated. When...conference paper 2023
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van Ginkel, H.J. (author), Romijn, J. (author), Vollebregt, S. (author), Zhang, Kouchi (author)The growing diversity in the used materials in semiconductor packaging provides challenges for achieving good interconnection. Particularly the very soft substrates, such as paper and polymers, and very hard, such as silicon carbide, offer unique challenges to wire-bonding or formation of vertical interconnects. Complementary technologies are...conference paper 2021
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Mo, J. (author), Schaffar, Gerald J.K. (author), Du, L. (author), Maier-Kiener, Verena (author), Kiener, Daniel (author), Vollebregt, S. (author), Zhang, Kouchi (author)Silicon carbide (SiC) coated vertically aligned carbon nanotubes (VACNT) are attractive material for fabricating MEMS devices as an alternative for bulk micromachining of SiC. In order to examine the mechanical properties of SiC-CNT composites at high temperatures, we fabricated VACNT micro-pillars with different amounts of SiC coating and...conference paper 2024
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Ji, X. (author), van Ginkel, H.J. (author), Hu, D. (author), Schmidt-Ott, A. (author), van Zeijl, H.W. (author), Vollebregt, S. (author), Zhang, Kouchi (author)Advances in semiconductor device manufacturing technologies are enabled by the development and application of novel materials. Especially one class of materials, nanoporous films, became building blocks for a broad range of applications, such as gas sensors and interconnects. Therefore, a versatile fabrication technology is needed to...conference paper 2022
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van Ginkel, H.J. (author), Orvietani, M. (author), Romijn, J. (author), Zhang, Kouchi (author), Vollebregt, S. (author)In this work, a novel microfabrication-compatible production process is demonstrated and used to fabricate UV photoresistors made from ZnO nanoparticles. It comprises a simple room-temperature production method for synthesizing and direct-writing nanoparticles. The method can be used on a wide range of surfaces and print a wide range of...conference paper 2022
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Romijn, J. (author), Vollebregt, S. (author), May, Alexander (author), Erlbacher, Tobias (author), van Zeijl, H.W. (author), Leijtens, J.A.P. (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)In this paper, we present a quadrant sun position sensor microsystem device in a silicon carbide technology that operates in a field-of-view of ±33° and reaches a mean error of 1.9° in this range. This will allow, for the first time, an inherently visible blind sun position sensor in a CMOS compatible technology. Opto-electronic integration of...conference paper 2022
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Romijn, J. (author), Vollebregt, S. (author), van Zeijl, H.W. (author), Zhang, Kouchi (author), Leijtens, Johan (author), Sarro, Pasqualina M (author)In this paper we present a sun position sensor platform with a scalable approach for the 3D integration of the sensor optics. This would facilitate the sun position sensor miniaturization, reduces fabrication cost and mitigates the need for sensor calibration. The sun position sensor platform is implemented in a seven mask BICMOS technology with...conference paper 2021
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Huang, Z.Q. (author), Poelma, René H. (author), Vollebregt, S. (author), Koelink, M.H. (author), Boschman, E. (author), Kropf, R. (author), Gallouch, M. (author), Zhang, Kouchi (author)This article shows the fabrication process and packaging of through polymer optical vias (TPOV). The TPOV enables encapsulation and packaging of silicon photonic systems using film assisted molding (FAM) and the creation of micron-sized through polymer optical vias. The optical vias are lithographically defined in thick film photo-resist (∼ 300...conference paper 2018
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Mo, J. (author), Shankar, S. (author), Zhang, Kouchi (author), Vollebregt, S. (author)Fabricating high-aspect-ratio (HAR) structures with silicon carbide (SiC) is a challenging task. This paper presents a silicon carbide (SiC) reinforced vertically aligned carbon nanotubes (VACNT) composite as a promising candidate to fabricate HAR MEMS devices for harsh environment applications. The use of a VACNT array allows the fast...conference paper 2023
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Niu, Yunfan (author), Mo, J. (author), May, Alexander (author), Rommel, Mathias (author), Rossi, Chiara (author), Romijn, J. (author), Zhang, Kouchi (author), Vollebregt, S. (author)This work presents the design and characterization of an analog-to-digital converter (ADC) with silicon carbide (SiC) for sensing applications in harsh environments. The SiC-based ADC is implemented with the state-of-the-art low-voltage SiC complementary-metal-oxide-semiconductor (CMOS) technology developed by Fraunhofer IISB. Two types of...conference paper 2023
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Li, J. (author), Vollebregt, S. (author), Zhang, Y. (author), Shekhar, A. (author), May, Alexander (author), van Driel, W.D. (author), Zhang, Kouchi (author)Due to the deficient passivation of the interface between silicon carbide and silicon dioxide, the defect-induced capture and release of trapped charges triggered by external Bias Temperature Stress (BTS) leads to parameter shifts and degraded device performance. This study models the trap-induced transient current in silicon carbide metal-oxide...conference paper 2024
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Zhang, Y. (author), Mo, J. (author), Vollebregt, S. (author), Zhang, Kouchi (author), May, Alexander (author), Erlbacher, Tobias (author)The 4H-silicon carbide (SiC) exhibits excellent material characteristics, particularly in high-temperature, high-power, high-frequency applications. However, the reliability of SiC-based devices operating in harsh environments is a critical concern. While time-dependent dielectric breakdown (TDDB) in conventional SiC devices has been extensively...conference paper 2023
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Silvestri, C. (author), Riccio, M. (author), Poelma, R.H. (author), Morana, B. (author), Vollebregt, S. (author), Santagata, F. (author), Irace, A. (author), Zhang, G.Q. (author), Sarro, P.M. (author)Thermal material properties play a fundamental role in the thermal management of microelectronic systems. The porous nature of carbon nanotube (CNT) arrays results in a very high surface area to volume ratio, which makes the material attractive for surface driven heat transfer mechanisms. Here, we report on the heat transfer performance of...journal article 2016
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Poelma, R.H. (author), Morana, B. (author), Vollebregt, S. (author), Schlangen, H.E.J.G. (author), Van Zeijl, H.W. (author), Fan, X. (author), Zhang, G.Q. (author)The porous nature of carbon nanotube (CNT) arrays allows for the unique opportunity to tailor their mechanical response by the infiltration and deposition of nanoscale conformal coatings. Here, we fabricate novel photo-lithographically defined CNT pillars that are conformally coated with amorphous silicon carbide (a-SiC) to strengthen the...journal article 2014
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Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a...journal article 2022
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Romijn, J. (author), Vollebregt, S. (author), Middelburg, L.M. (author), el Mansouri, B. (author), van Zeijl, H.W. (author), May, Alexander (author), Erlbacher, Tobias (author), Leijtens, Johan (author), Zhang, Kouchi (author), Sarro, Pasqualina M (author)This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are...journal article 2022
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Mo, J. (author), LI, J. (author), Zhang, Y. (author), Romijn, J. (author), May, Alexander (author), Erlbacher, Tobias (author), Zhang, Kouchi (author), Vollebregt, S. (author)In this work, a highly linear temperature sensor based on a silicon carbide (SiC) p-n diode is presented. Under a constant current biasing, the diode has an excellent linear response to the temperature (from room temperature to 600°C). The best linearity (coefficient of determination ${R}^{{2}}$ = 99.98%) is achieved when the current density...journal article 2023
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Cui, Z. (author), Zhang, Y. (author), Hu, D. (author), Vollebregt, S. (author), Fan, J. (author), Fan, X. (author), Zhang, Kouchi (author)Understanding the atomic diffusion features in metallic material is significant to explain the diffusion-controlled physical processes. In this paper, using electromigration experiments and molecular dynamic (MD) simulations, we investigate the effects of grain size and temperature on the self-diffusion of polycrystalline aluminium (Al). The...journal article 2022