From Si Towards SiC Technology for Harsh Environment Sensing

In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh...

Resistive and CTAT Temperature Sensors in a Silicon Carbide CMOS Technology

Accurately sensing the temperature in silicon carbide (power) devices is of great importance to their reliable operation. Here, temperature sensors by resistive and CMOS structures are fabricated and characterized in an open silicon carbide CMOS technology. Over a range of 25-200°C, doped design layers have negative temperature coefficients of...

High aspect ratio spiral resonators for process variation investigation and MEMS applications

In this work a method is described to investigate process variations across a wafer. Through wafer MEMS spiral resonators were designed, simulated, fabricated and characterized by measuring the eigenfrequency and corresponding mode shapes. Measuring the eigenfrequency and resulting spectral behavior of resonators on different locations on the...

Designing a 100 [aF/nm] capacitive transducer

The mechanical part of inertial sensors can be designed to have a large mechanical sensitivity, but also requires the transduction mechanism which translates this displacement. The overall system resolution in mechanical inertial sensors is dictated by the noise contribution of each stage and the magnitude of each sensitivity, see also Figure...

Non-linear bulk micromachined accelerometer for high sensitivity applications

This work describes the design, modelling and realisation of the mechanical part of a non-linear MEMS accelerometer intended for large displacement behaviour. For this, a mass/spring system was designed with an extremely low resonance frequency. In this work the mechanical behaviour was verified by measurements done using an optical setup,...

Impedance Spectroscopy for Enhanced Data Collection of Conductometric Soot Sensors

Impedance spectroscopy in the frequency range 100 Hz to 10 kHz has been applied to the Inter-Digitated Electrode (IDE) structure that is conventionally operated as a resistive sensor for the measurement of Particulate Matter (PM). The measurement of both the in-phase (resistive) and out-of-phase (capacitive) components of the impedance over this...

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years in many research fields, such as power electronics, high operation temperature circuits, harsh environmental sensing, and more. To facilitate research on complex integrated SiC circuits, ensure reproducibility, and cut down cost, the availability of a...

Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology

This work demonstrates the first on-chip UV optoelectronic integration in 4H-SiC CMOS, which includes an image sensor with 64 active pixels and a total of 1263 transistors on a 100 mm2 chip. The reported image sensor offers serial digital, analog, and 2-bit ADC outputs and operates at 0.39 Hz with a maximum power consumption of 60 μW, which are...

High-resolution MEMS inertial sensor combining large-displacement buckling behaviour with integrated capacitive readout

Commercially available gravimeters and seismometers can be used for measuring Earth’s acceleration at resolution levels in the order of ng∕Hz (where g represents earth’s gravity) but they are typically high-cost and bulky. In this work the design of a bulk micromachined MEMS device exploiting non-linear buckling behaviour is described, aiming...

Simulation for stability of a beam-mass based high-resolution MEMS gravimeter

In this paper, stability and mechanistic simulations for a four-beam-mass-based MEMS gravimeter were conducted, and guidelines for the gravimeter design were proposed. Based on a prototyped MEMS device, the nonlinear finite element model was validated first against the experimental results. Then, we demonstrated three different scenarios in...

Toward a Self-Sensing Piezoresistive Pressure Sensor for all-SiC Monolithic Integration

This work focusses on the design and fabrication of surface micromachined pressure sensors, designed in a modular way for the integration with analog front-end read-out electronics. Polycrystalline 3C silicon carbide (SiC) was used to fabricate free-standing high topography cavities exploiting surface micromaching. The poly-SiC was in-situ...

Low power AlGaN/GaN MEMS pressure sensor for high vacuum application

A micro-scale pressure sensor based on suspended AlGaN/GaN heterostructure is reported with non-linear sensitivity. By sealing the cavity, vacuum sensing at various temperatures was demonstrated. To validate the proposed concept of the AlGaN/GaN vacuum sensor, a 700 µm diameter circular membrane was electrically characterized under applied...

Maintaining transparency of a heated MEMs membrane for enabling long-term optical measurements on soot-containing exhaust gas

Ensuring optical transparency over a wide spectral range of a window with a view into the tailpipe of the combustion engine, while it is exposed to the harsh environment of sootcontaining exhaust gas, is an essential pre-requisite for introducing optical techniques for long-term monitoring of automotive emissions. Therefore, a regenerable...

Surface-micromachined Silicon Carbide Pirani Gauges for Harsh Environments

The application of pressure sensors in harsh environments is typically hindered by the stability of the material over long periods of time. This work focuses on the design and fabrication of surface micromachined Pirani gauges which are designed to be compatible with state-of-the-art Silicon Carbide CMOS technology. Such an integrated...

Microfabricated albedo insensitive sun position sensor system in silicon carbide with integrated 3D optics and CMOS electronics

The next generation of satellites will need to tackle tomorrow's challenges for communication, navigation and observation. In order to do so, it is expected that the amount of satellites in orbit will keep increasing, form smart constellations and miniaturize individual satellites to make access to space cost effective. To enable this next...