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- Craciun, M.F. (author), Rogge, S. (author), Klapwijk, T.M. (author), Morpurgo, A. (author) patent 2005
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2004
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- Caro, J. (author), Vink, I.D. (author), Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author), Loo, R. (author), Caymax, M. (author) journal article 2004
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- Smit, G.D.J. (author), Rogge, S. (author), Caro, J. (author), Klapwijk, T.M. (author) journal article 2003
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- Rogge, S. (author), Durkut, M. (author), Klapwijk, T.M. (author) journal article 2003
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Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)A generally applicable model is presented to describe the potential barrier shape in ultrasmall Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with...journal article 2002
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Smit, G.D.J. (author), Rogge, S. (author), Klapwijk, T.M. (author)We have measured electrical transport across epitaxial, nanometer-sized metal–semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be ? 104 times larger...journal article 2002