Highly-conformal sputtered through-silicon vias with sharp superconducting transition

This paper describes the microfabrication and electrical characterization of aluminum-coated superconducting through-silicon vias (TSVs) with sharp superconducting transition above 1 K. The sharp superconducting transition was achieved by means of fully conformal and void-free DC-sputtering of the TSVs with Al, and is here demonstrated in up...

Metal and Polymeric Strain Gauges for Si-based, Monolithically Fabricated Organs-on-Chips

Organ-on-chip (OOC) is becoming the alternative tool to conventional in vitro screening. Heart-on-chip devices including microstructures for mechanical and electrical stimulation have been demonstrated to be advantageous to study structural organization and maturation of heart cells. This paper presents the development of metal and polymeric...

A novel method to transfer porous PDMS membranes for high throughput Organ-on-Chip and Lab-on-Chip assembly

We present a novel method to easily and reliably transfer highly porous, large area, thin microfabricated Polydimethylsiloxane (PDMS) porous membranes on Lab-on-Chip (LOC) and Organ-on-Chip (OOC) devices. The use of silicon as carrier substrate and a water-soluble sacrificial layer allows a simple and reproducible transfer of the membranes to...

A multiwell plate Organ-on-Chip (OOC) device for in-vitro cell culture stimulation and monitoring

This work presents the first multi-well plate that allows for simultaneous mechanical stimulation and electrical monitoring of multiple in-vitro cell cultures in parallel. Each well of the plate is equipped with an Organ-on-Chip (OOC) device consisting of a stretchable micro-electrode array (MEA). For the first time, a film assisted molding ...

A highly miniturized single-chip MOEMS scanner for all-in-one imaging solution

A highly miniaturized, single-chip, large scanning range MOEMS scanner is demonstrated. This intrinsically-aligned, monolithically integrated device uses small angular displacement to provide a linear scanning range of 2000 μm in the lateral and 1000 μm in the vertical direction, at a working distance of 2 cm, with an average operating power...

A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors

In this paper we report a novel transfer-free graphene fabrication process, which does not damage the graphene layer. Uniform graphene layers on 4" silicon wafers were deposited by chemical vapor deposition using the CMOS compatible Mo catalyst. Removal of the Mo layer after graphene deposition results in a transfer-free and controlled placement...