Searched for: collection%253Air
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Jiang, Jing (author), Chen, Wei (author), Qian, Yichen (author), Meda, Abdulmelik H. (author), Fan, X. (author), Zhang, Kouchi (author), Fan, J. (author)
Considerable advancements in power semiconductor devices have resulted in such devices being increasingly adopted in applications of energy generation, conversion, and transmission. Hence, we proposed a fan-out panel-level packaging (FOPLP) design for 30-V Si-based metal-oxide-semiconductor field-effect transistor (MOSFET). To achieve...
journal article 2023
document
Chen, Wei (author), Jiang, Jing (author), Meda, Abdulmelik H. (author), Ibrahim, Mesfin S. (author), Zhang, Kouchi (author), Fan, J. (author)
SiC MOSFET is mainly characterized by the higher electric breakdown field, higher thermal conductivity, and lower switching loss enabling high breakdown voltage, high-temperature operation, and high switching frequency. However, their performances are considerably limited by the high parasitic inductance and poor heat dissipation capabilities...
journal article 2023
document
Liu, Ke (author), Tan, C. (author), Li, Shizhen (author), Yuan, Wucheng (author), Liu, X. (author), Zhang, Kouchi (author), French, P.J. (author), Ye, H. (author), Wang, S. (author)
This paper proposes and simulates research on the reverse recovery characteristics of two novel superjunction (SJ) MOSFETs by adjusting the doping profile. In the manufacturing process of the SJ MOSFET using multilayer epitaxial deposition (MED), the position and concentration of each Boron bubble can be adjusted by designing different doping...
journal article 2023
document
Yun, Minghui (author), Cai, Miao (author), Yang, Daoguo (author), Yang, Yiren (author), Xiao, Jing (author), Zhang, Kouchi (author)
Bond wire damage is one of the most common failure modes of metal-oxide semiconductor field-effect transistor (MOSFET) power devices in wire-welded packaging. This paper proposes a novel bond wire damage detection approach based on two-port network measurement by identifying the MOSFET source parasitic inductance (LS). Numerical calculation...
journal article 2022
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Qian, Yichen (author), Hou, F. (author), Fan, J. (author), Lv, Quanya (author), Fan, X. (author), Zhang, Kouchi (author)
A new panel-level silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) power module was developed by using the fan-out and embedded chip technologies. To achieve the more effective thermal management and higher reliability under thermal cycling, a new optimization method called Ant colony optimization-back...
journal article 2021
document
Sun, B. (author), Fan, Xuejun (author), Fan, J. (author), Zhang, Kouchi (author), Qian, Cheng (author)
In this work, a physics-of-failure (PoF) reliability prediction methodology is combined with statistical models to consider the interaction between the lumen depreciation and catastrophic failures of LEDs. The current in each LED may redistribute when the catastrophic failure occurs in one of LEDs in an array, thus affecting the operation...
conference paper 2017
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