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Galatro, L. (author), Spirito, M. (author)In this paper, we propose a method based on 3-D electromagnetic simulations, for the characteristic impedance extraction of transmission lines employed in TRL calibration, focusing on lines integrated in silicon technologies. The accuracy achieved with TRL calibrations using the proposed characteristic impedance extraction is benchmarked...journal article 2017
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Lee, M.J. (author), Ronchini Ximenes, A. (author), Padmanabhan, P. (author), Wang, Tzu Jui (author), Huang, Kuo Chin (author), Yamashita, Yuichiro (author), Yaung, Dun Nian (author), Charbon-Iwasaki-Charbon, E. (author)We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P<sup>+</sup>/Deep N-well junction with a circular shape, for which N-well is intentionally excluded to achieve a wide depletion region, thus...journal article 2018
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Vijselaar, Wouter J.C. (author), Perez Rodriguez, P. (author), Westerik, Pieter J. (author), Tiggelaar, Roald M. (author), Smets, A.H.M. (author), Gardeniers, Han (author), Huskens, Jurriaan (author)Wireless photoelectrochemical (PEC) devices promise easy device fabrication as well as reduced losses. Here, the design and fabrication of a stand-alone ion exchange material-embedded, Si membrane-based, photoelectrochemical cell architecture with micron-sized pores is shown, to overcome the i) pH gradient formation due to long-distance ion...journal article 2019
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Xin, Yu (author), Pandraud, G. (author), French, P.J. (author)In this Letter, a slope transfer method to fabricate vertical waveguide couplers is proposed. This method utilises wet etched Si as a mask, and takes advantage of dry etching selectivity between Si and SiC, to successfully transfer the profile from the Si master into SiC. By adopting this method, a <2° slope is achieved. Such a taper can...journal article 2019
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Gaio, N. (author)The cost and the development time of pharamecutical products are often severely affected by the in vitro tests currently employed in pharmaceutical R&D. These assays are often failing to accurately recapitulate diseases and to predict human responses to new medicines. Organ-on-Chip (OOC) devices are designed to result in advanced in vitro...doctoral thesis 2019
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Hueting, R. J.E. (author), De Vries, H. (author), Dutta, S. (author), Annema, A. J. (author)The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However,...journal article 2021
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Zheng, G. (author)This dissertation describes a set of experiments with the goal of creating a super-conductor-semiconductor hybrid circuit quantum electrodynamics architecture with single electron spins. Single spins in silicon quantum dots have emerged as attractive qubits for quantum computation. However, how to scale up spin qubit systems remains an open...doctoral thesis 2021
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Eenink, H.G.J. (author)The understanding of quantum mechanics enabled the development of technology such as transistors and has been the foundation of today’s information age. Actively using quantum mechanics to build quantum technology may cause a second revolution in handling information. However, to execute meaningful algorithms, largescale quantum computers have...doctoral thesis 2021
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de Vrijer, T. (author), Smets, A.H.M. (author)In this abstract an overview is presented of research performed in the DISCO project, on the development of a silicon-based high voltage multijunction device for autonomous solar to fuel applications.'conference paper 2022
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Dutta, S. (author), Hueting, Raymond J.E. (author), Verbiest, G.J. (author)We report an avalanche-mode light-emitting transistor (AMLET) in silicon (Si), based on a lateral bipolar junction, which emits light near 760 nm optical wavelength with a record low bandwidth of 38 nm. The AMLET, designed in a CMOS-compatible silicon-on-insulator (SOI) photonics platform, is optically confined within a 0.21 ∼\μ m thick SOI...journal article 2022
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Lawrie, W.I.L. (author)Quantum computers based on semiconductor quantum dots are proving promising contenders for large scale quantum information processing. In particular, group IV based semiconductor hosts containing an abundance of nuclear spin-zero isotopes have made considerable headway into fulfilling the requirements of a universal quantum computer. Silicon (Si...doctoral thesis 2022
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Tous, Loic (author), Govaert, Jonathan (author), Harrison, Samuel (author), Carrière, Carolyn (author), Barth, Vincent (author), Giglia, Valentin (author), Buchholz, Florian (author), Chen, N. (author), Gordon, I.M.F. (author)The EU crystalline silicon (c-Si) PV manufacturing industry has faced strong foreign competition in the last decade. To strive in this competitive environment and differentiate itself from the competition, the EU c-Si PV manufacturing industry needs to (1) focus on highly performing c-Si PV technologies, (2) include sustainability by design,...journal article 2023