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Karami, M.A. (author), Gersbach, M. (author), Charbon, E. (author)A single-photon avalanche diode (SPAD) fabricated in a 90nm standard CMOS process is reported. The detector comprises an octagonal multiplication region and a guard ring to prevent premature edge breakdown using exclusively standard layers. The proposed structure is the result of a systematic study aimed at miniaturization, while optimizing...conference paper 2010
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Arslan, A. (author), Ishihara, R. (author), Derakhshandeh, J. (author), Beenakker, C.I.M. (author)Design, fabrication and measurement results of single grain (SG) lateral PIN photodiodes and SG thin film transistors (TFT) are reported in this paper. Devices were developed to be used in indirect X-ray image sensor pixel design. We have controlled position of 6 ?m x 6 ?m silicon grains with excimer-laser crystallization of a-Si film. Lateral...conference paper 2011
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Moens, E. (author), Meuret, Y. (author), Ottevaere, H. (author), Sarkar, M. (author), San Segundo Bello, D. (author), Merken, P. (author), Thienpont, H. (author)In this paper we discuss the design of a novel miniaturized image sensor based on the working principle of insect facet eyes. The main goals are to design an imaging system which captures a large field of view (FOV) and to find a good trade-off between image resolution and sensitivity. To capture a total FOV of 124°, we split up this FOV into 25...conference paper 2010
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Nampoothiri, G.G. (author), Horemans, M.L.R. (author), Theuwissen, A.J.P. (author)We analyze the “ageing” effect on image sensors introduced by neutrons present in natural (terrestrial) cosmic environment. The results obtained at sea level are corroborated for the first time with accelerated neutron beam tests and for various image sensor operation conditions. The results reveal many fascinating effects that these rays...conference paper 2011
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Romijn, J. (author), Vollebregt, S. (author), van Zeijl, H.W. (author), Zhang, Kouchi (author), Leijtens, Johan (author), Sarro, Pasqualina M (author)In this paper we present a sun position sensor platform with a scalable approach for the 3D integration of the sensor optics. This would facilitate the sun position sensor miniaturization, reduces fabrication cost and mitigates the need for sensor calibration. The sun position sensor platform is implemented in a seven mask BICMOS technology with...conference paper 2021
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Lee, J. (author), Theuwissen, A.J.P.A.M. (author)This paper presents a new 2-step SAR ADC architecture for image sensors in machine vision applications. This structure effectively improves the structural problems of the image sensor caused by the area occupied by the ADC, such as linearity and temporal noise performance. In this work, we designed a two-step SAR ADC using a 6-bit SAR ADC and...conference paper 2023
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Arslan, A. (author)Digital flat panel X-ray imagers are currently using a-Si and poly-Si thin-film-transistors (TFTs). a-Si TFT permits the use of large area substrates, however, due to the amorphous nature, the carrier mobility is very low (<1 cm2/Vs). Poly-Si TFT improves the mobility (~150 cm2/Vs) but due to random grain boundaries, the defect density is still...doctoral thesis 2015
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Sarkar, M. (author)Biological systems are a source of inspiration in the development of small autonomous sensor nodes. The two major types of optical vision systems found in nature are the single aperture human eye and the compound eye of insects. The latter are among the most compact and smallest vision sensors. The eye is a compound of individual lenses with...doctoral thesis 2011
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Chen, Y. (author)This thesis presents the development of low-noise CMOS image sensors for radio-molecular imaging. The development is described in two directions: firstly, from the technology point of view to reduce the pixel noise level, and secondly from the design point of view to reduce the pixel readout circuits noise level. With respect to the SNR and...doctoral thesis 2012
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Ramachandra Rao, P. (author)The aim of this thesis was twofold: investigating the effect of ionizing radiation on 4-T CMOS image sensors and the possibility of realizing a CCD like sensor in standard 0.18-?m CMOS technology (for medical applications). Both the aims are complementary; borrowing and lending many aspects of radiation and device physics amongst each other.doctoral thesis 2009
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Xie, N. (author)A digital sun sensor is superior to an analog sun sensor in aspects of resolution, albedo immunity, and integration. The proposed Micro-Digital Sun Sensor (µDSS) is an autonomous digital sun sensor which is implemented by means of a CMOS image sensor, which is named APS+. The µDSS is designed specifically for micro-satellite application which...doctoral thesis 2012
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Wang, X. (author)CMOS image sensors are devices that convert illumination signals (light intensity) into electronic signals. The goal of this thesis has been to analyze dominate noise sources in CMOS imagers and to improve the image quality by reducing the noise generated in the CMOS image sensor pixels.doctoral thesis 2008
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Xu, Y. (author)This thesis gives an insightful analysis of the pinned photodiode 4T CMOS pixel from three different aspects. Firstly, from the charge accumulated aspect, the PPD full well capacity and related parameters of influence are investigated such as the pinning voltage, and transfer gate potential barrier. Secondly, from the charge transfer aspect, the...doctoral thesis 2015
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Tan, J. (author)This thesis investigates the ionizing radiation effects on 4T pixels and the elementary in-pixel test devices with regard to the electrical performance and the optical performance. In addition to an analysis of the macroscopic pixel parameter degradation, the radiation-induced degradation mechanisms are also presented from the microscopic...doctoral thesis 2013
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Abarca Prouza, A.N. (author)This thesis describes the integration of temperature sensors into a CMOS image sensor (CIS). The temperature sensors provide the in-situ temperature of the pixels as well as the thermal distribution of the pixel array. The temperature and the thermal distribution are intended to be used to compensate for dark current affecting the CIS. Two...doctoral thesis 2021
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Zhang, C. (author)In conventional applications, such as bio-imaging and microscopy, SPAD is typically used as a single-photon counter. However, this advantage has been challenged by other photon-counting technologies, especially from CMOS-based QIS. Comparatively, apart from single-photon counting capability, QIS is superior to SPAD in terms of intrinsic multi...doctoral thesis 2019
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- Sun, P. (author) doctoral thesis 2016
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Antolović, I.M. (author)The aim of this research is to explore the potential advantages of SPAD imagers used in microscopy. An ideal microscopy detector requires high sensitivity (high quantum efficiency QE or photon detection probability PDP), photon counting operation, low noise (dark current or dark count rate), timing resolution in the order of 100 ps, frame rate...doctoral thesis 2018
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Chen, Y. (author), Wang, X. (author), Mierop, A.J. (author), Theuwissen, A.J.P. (author)This paper presents a CMOS imager sensor with pinned-photodiode 4T active pixels which use in-pixel buried-channel source followers (SFs) and optimized row selectors. The test sensor has been fabricated in a 0.18-mum CMOS process. The sensor characterization was carried out successfully, and the results show that, compared with a regular imager...journal article 2009
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Mheen, B. (author), Song, Y.J. (author), Theuwissen, J.P. (author)This letter presents an electrical method to reduce dark current as well as increase well capacity of four-transistor pixels in a CMOS image sensor, utilizing a small negative offset voltage to the gate of the transfer (TX) transistor particularly only when the TX transistor is off. As a result, using a commercial pixel in a 0.18 ?m CMOS process...journal article 2008