Sintered nano-copper (Cu) improves the thermal performance of SiC MOSFET Fan-Out Panel-Level Packaging (FOPLP), a widely adopted method for miniaturizing electronic systems and modules. This study presented, for the first time, the prototyping and characterization of a 1.2 kV SiC MOSFET FOPLP half-bridge power module using sintered nano-Cu die attachment (FOPLPCu), and compared it with a reference module using conductive Ag adhesive interconnects (FOPLP_Ag). Thermal, mechanical, and electrical co-simulations proved that FOPLPCu exhibited superior performances with lower thermal resistance, power loop parasitic inductance, and thermal deformation, achieving values of 0.14 °C/W (with double-sided cooling), 3.15 nH (@100 kHz), and 9.05e-5 m, respectively. In contrast, FOPLP_Ag showed higher values of 0.24 °C/W, 3.27 nH, and 1.04e-4 m. It is worth noting that due to the higher elastic modulus of sintered nano Cu, FOPLPCu experienced increased thermal stress. The internal structure analysis of the packaged devices, conducted using CSAM, showed that both FOPLPCu and FOPLP_Ag had well-formed interconnections, with no signs of delamination in the EMC, RDL, or interconnect layers. Thermal testing showed that FOPLPCu achieved a single-side thermal resistance of 1.95 °C/W, representing a 22% improvement compared to FOPLP_Ag's 2.5 °C/W. Electrical testing further demonstrated that FOPLPCu had lower on-state resistance compared to FOPLP_Ag, while maintaining comparable breakdown voltage, threshold voltage, and body diode forward voltage drop.

In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microelectronic manufacturing. This issue is compounded by the additional thermal stress that accumulates during device operation. Therefore, it is essential to understand, characterize, and control this residual stress to ensure the reliability and efficiency of microelectronic devices. Raman spectroscopy emerges as an invaluable tool for nondestructive, fast, noncontact, and precise testing of micro-scale mechanics, significantly aiding in stress and strain analysis within microelectronic manufacturing. This article aims to provide a thorough overview of the theory and application beyond a mere compilation of recent advances. Theoretically, it critically evaluates existing models that describe the Raman-stress relation. Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro-scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman-stress detection technology.

Sintered nanocopper (nanoCu) paste, exhibiting excellent electrical, thermal, and mechanical performances, offers promise for interconnections in wide bandgap (WBG) semiconductors operating at higher temperatures. However, sintered nanoCu is prone to severe corrosion in environments containing H2S, with on-site characterization methods for the composition of corrosion products currently lacking. In this study, a novel method was proposed for the rapid characterization of corrosion products during the corrosion process based on hyperspectral imaging (HSI) technology. Sintered nanoCu samples were subjected to 336 h H2S gas corrosion tests with bulk Cu as the reference, followed by correlating the corrosion element content with hyperspectral characteristic parameters. Then, the morphology and composition of corrosion products were researched using focused ion beam scanning electron microscope (FIB-SEM) and transmission electron microscope (TEM) analysis. The results showed that (1) during the corrosion process, a linear relationship was established between the Cu, O elemental atomic contents on the sample surfaces and their hyperspectral characteristic parameters. (2) The elemental atomic content of S exhibited an exponential relationship with the characteristic parameter. (3) The change rate in the spectral characteristic parameters during the corrosion process reflected the severity of corrosion, which was confirmed by comparing the thickness of the corrosion products of the sintered nanoCu and bulk Cu. This study offers a foundation for the further investigation of rapid on-site characterization of sintered nanoCu corrosion involving H2S.