O.C. Akgün
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10 records found
1
On the longevity and inherent hermeticity of silicon-ICs
Evaluation of bare-die and PDMS-coated ICs after accelerated aging and implantation studies
Dynamic Digital Twin
Diagnosis, Treatment, Prediction, and Prevention of Disease During the Life Course
A digital twin (DT), originally defined as a virtual representation of a physical asset, system, or process, is a new concept in health care. A DT in health care is not a single technology but a domain-adapted multimodal modeling approach incorporating the acquisition, management, analysis, prediction, and interpretation of data, aiming to improve medical decision-making. However, there are many challenges and barriers that must be overcome before a DT can be used in health care. In this viewpoint paper, we build on the current literature, address these challenges, and describe a dynamic DT in health care for optimizing individual patient health care journeys, specifically for women at risk for cardiovascular complications in the preconception and pregnancy periods and across the life course. We describe how we can commit multiple domains to developing this DT. With our cross-domain definition of the DT, we aim to define future goals, trade-offs, and methods that will guide the development of the dynamic DT and implementation strategies in health care.
For mm-sized implants incorporating silicon integrated circuits, ensuring lifetime operation of the chip within the corrosive environment of the body still remains a critical challenge. For the chip's packaging, various polymeric and thin ceramic coatings have been reported, demonstrating high biocompatibility and barrier properties. Yet, for the evaluation of the packaging and lifetime prediction, the conventional helium leak test method can no longer be applied due to the mm-size of such implants. Alternatively, accelerated soak studies are typically used instead. For such studies, early detection of moisture/ion ingress using an in-situ platform may result in a better prediction of lifetime functionality. In this work, we have developed such a platform on a CMOS chip. Ingress of moisture/ions would result in changes in the resistance of the interlayer dielectrics (ILD) used within the chip and can be tracked using the proposed system, which consists of a sensing array and an on-chip measurement engine. The measurement system uses a novel charge/discharge based time-mode resistance sensor that can be implemented using simple yet highly robust circuitry. The sensor array is implemented together with the measurement engine in a standard 0.18 μm 6-metal CMOS process. The platform was validated through a series of dry and wet measurements. The system can measure the ILD resistance with values of up to 0.504 peta-ohms, with controllable measurement steps that can be as low as 0.8 MΩ. The system works with a supply voltage of 1.8 V, and consumes 4.78 mA. Wet measurements in saline demonstrated the sensitivity of the platform in detecting moisture/ion ingress. Such a platform could be used both in accelerated soak studies and during the implant's life-time for monitoring the integrity of the chip's packaging.
This paper presents the design of an ultra-low energy, rakeness-based compressed sensing (CS) system that utilizes time-mode (TM) signal processing (TMSP). To realize TM CS operation, the presented implementation makes use of monostable multivibrator based analog-to-time converters, fixed-width pulse generators, basic digital gates and an asynchronous time-to-digital converter. The TM CS system was designed in a standard 0.18 µm IC process and operates from a supply voltage of 0.6V. The system is designed to accommodate data from 128 individual sensors and outputs 9-bit digital words with an average reconstruction SNR of 35.31 dB, a compression ratio of 3.2, with an energy dissipation per channel per measurement vector of 0.621 pJ at a rate of 2.23 k measurement vectors per second.
simulation of the AP-TDC is done using a standard CMOS 65 nm process. The least-significant-bit resolution of the AP-TDC is designed to be 200 ps and the AP-TDC outputs 7-bit digital words with an ENOB of 6.2 bits. The dynamic range of the TDC is 25.4 ns and the TDC core consumes 38 µW from a supply voltage of 1 V and has a total area of 1275 µm2. When compared to a Flash TDC implementation using the same delay elements, power consumption, total area, and conversion time are reduced by 28.3%, 31.5%, and 24.6%, respectively. The AP-TDC has a figure-of-merit of 9.9-fJ/conversion step. ...
simulation of the AP-TDC is done using a standard CMOS 65 nm process. The least-significant-bit resolution of the AP-TDC is designed to be 200 ps and the AP-TDC outputs 7-bit digital words with an ENOB of 6.2 bits. The dynamic range of the TDC is 25.4 ns and the TDC core consumes 38 µW from a supply voltage of 1 V and has a total area of 1275 µm2. When compared to a Flash TDC implementation using the same delay elements, power consumption, total area, and conversion time are reduced by 28.3%, 31.5%, and 24.6%, respectively. The AP-TDC has a figure-of-merit of 9.9-fJ/conversion step.